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題名 | 晶圓上奈米級厚度氧化的銅在酸性液中溶解特性之研究=Dissolution Characterization of Oxidized Copper with Nano-Level Thicknesses on the Wafer in Acid Solutions |
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作者 | 楊文彬; 劉鳳錦; 何定穎; 朱錦明; | 書刊名 | 聯大學報 |
卷期 | 3:1 民95.06 |
頁次 | 頁16-23 |
分類號 | 440.39 |
關鍵詞 | 動力學; 特性分析; 形態; 氧化的銅; Kinetics; Characterization analysis; Morphology; Oxidized copper; |
語文 | 中文(Chinese) |
中文摘要 | 銅薄膜使用濺鍍法沉積在矽晶圓基材上,在不同反應溫度下使用稀酸溶液來研究溶解氧化的銅,樣品使用表面輪廓儀、原子力顯微鏡、掃描式電子顯微鏡和四點探針測量。結果說明在稀硫酸溶液下溶解氧化的銅之反應動力學為兩段式行為,在不同酸液下可溶解的氧化層銅厚度不相同,實驗也說明各種氧化膜的形態與電阻值受溶解反應溫度和酸液之影響。 |
英文摘要 | Copper thin films were deposited by sputtering on silicon wafer substrates. The dissolution of oxidized copper in dilution acid solution at different reaction temperature was studied. The samples were analyzed by profilometer, atomic force microscopy, scanning electron microscopy and four-point probe measurements. The results showed that the dissolution reaction kinetics of oxidized copper was produced by two step behavior in dilute H[feaf]SO[feb2] solution. The different thinkness of oxided layer was diluted by different acid solutions. It is shown that the morphology and resistivity of various oxidized films was affected by the acid solution and dissolution reaction temperature. |
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