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題名 | 探討氮化鎵六角量子點埋入阻擋層之應變效應=A Study of Strain Effect of GaN/AlN Hexagonal Pyramid Quantum Dot Embedded in AlGaN Block Layer |
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作者姓名(中文) | 路富發; 高進興; | 書刊名 | 中正嶺學報 |
卷期 | 34:1 民94.11 |
頁次 | 頁263-282 |
分類號 | 337.8 |
關鍵詞 | 自組式氮化鎵/氮化鋁六角量子點; 氮化鋁鎵阻擋層; 有限元素法; 壓電效應; Hexagonal pyramid GaN/AlN self-assembled quantum dots; AlGaN blocking layer; Finite element method; Piezoelectric effect; |
語文 | 中文(Chinese) |
中文摘要 | 本文以有限元素法的處理程序,利用算網格局部加密及經驗膺勢法得出的有效質量參數,分析自組式氮化鎵/氮化鋁六角量子點的基態躍遷能量,模擬結果為2.83eV與實驗值2.95eV,兩者相差約為0.12eV(誤差4%),遠低於近期其他文獻的計算差距約在06eV(誤差20%)以上。壓電效應必須納入,若未考慮壓電效應,則基態躍遷能量高估至3.91eV。進而引人氮化鋁鎵阻擋層結構,探討對立角量擬點的電子結構與基態躍遷能量之影響,獲得量子點基態躍遷的光吸收或發射,有往短波段移動(藍位移)的趨勢。 |
英文摘要 | The electronic structure and ground state transition energy of the strained wurtzite hexagonal pyramid Gan/AlN self-assembled quantum dots is studied suing a finite element method. Due to mesh local denser and effective mass parameters calculated from empirical pseudopotential method are adopted, our calculated value of the ground state transition energy (2.83eV), deviate from the experimental data (2.95 eV) is only 0.12 eV (4%), less than 0.6 eV (20%) above found in the other literatures recently. Piezoelectric effect must be taken into account, otherwise the ground state transition energy would be overestimated up to 3.91 eV. Furthermore, numerical results show there is a trend toward blue shifting (shorter wavelength) in the optical absorption or emission of interband transition, as a result of induced by AlGaN blocking layer embedded in hexagonal pyramid GaN/AlN quantum dots. |
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