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題 名 | 氮化鎵緩衝層對氮化鎵磊晶膜品質之影響=The Effect of GaN Buffer Layer on the Quality of GaN Epilayer |
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作 者 | 張守進; 蘇炎坤; 楚大綱; 莊賦祥; 楊昌義; | 書刊名 | 真空科技 |
卷 期 | 13:3 2000.09[民89.09] |
頁 次 | 頁33-37 |
分類號 | 448.552 |
關鍵詞 | 緩衝層; 氮化鎵磊晶膜; |
語 文 | 中文(Chinese) |
中文摘要 | GaN磊晶薄膜若是直接長在藍寶石基板上,則表面顯得非常粗糙。但若在藍寶石基板上先長一層薄的緩衝層,則GaN表面即可變得極明亮。GaN直接成長在藍寶石基板上之電子移動率只有6.3cm2/V.s,濃度高達1.4×1020cm-3。表面平滑度與成長緩衝層之TMGa流量有密切的關係。當緩衝層之TMGa流量高於6sccm時,GaN高溫磊晶膜表面開始出現六角柱結晶。由霍爾量測之電特性分析發現,電子移動率隨緩衝層之TMGa流量增加而降低,當緩衝層之TMGa流量為3 sccm (16μmole/min)時,電子移動率最高可達71.5cm-2/V.s,濃度達4.66×1017cm-3。GaN高溫磊晶膜之成長速率隨緩衝層之TMGa流量增加而減慢。又當緩衝層之TMGa流量為3 sccm時,光激發光光譜黃色波段之光譜很明顯較強。也有人認為黃色波段之放射光是來自載子補償或鎵原子空缺所造成的。而深陷井階可能是自GaN磊晶膜內之龜裂或缺陷現象所造成。在緩衝層TMGa之流量為6 sccm時,其半高寬值很高,且波峰波長移至364nm,可知6 sccm之成長條件不佳,造成GaN晶膜品質不良,且其表面容易形成六角柱結晶。 |
英文摘要 | The epilayer surface was very rough if the GaN epitaxy was directly grown on sapphire without any buffer layer pre-grown. The electron mobility and concentration were 6.3 cm2/V.s and 1.4×1020 cm-3, respectively. If a GaN buffer layer was first grown on the sapphire substrate at low temperature, then the growth temperature was increased to 1000℃ to grow the GaN epitaxy on the buffer layer. The GaN epiayer surface became mirror-like. The surface smoothnes of the epilayers was related to the flow rates of TMGa for buffer layer growth. When the TMGa flow rate was higher than 6 sccm, the hexagonal crystalline began to appear on the GaN epitaxy surface. From the Hall measurement and electrical characterization, it was found that the electron mobility and concentration were 71.5cm2/V.s and 4.66×1017cm-3, respectively, when the buffer TMGa flow rate 3 sccm (16μmole/min) were used. The GaN epilayer growth rate decreased with increasing TMGa buffer-layer flow rate. Using the TMGa flow rate of 3 sccm for the buffer layer growth, the GaN epilayer has very strong yellow-band emission as seen from the photoluminescence spectrum measurement. The yellow band emission is attributed to the carrier compensation or Ga vacancy. The deep levels may be due to the crack dislocations in the GaN epilayer When the buffer layer TMGa flow rate increased to 6 sccm, the PL FWHM increased to be layer and the near-band-edge emission peak shifted to 364 nm. It indicated that the 6 sccm growth condition was not useful. The epilayer quality was poor and there were hexagonal crystalline generated on the surface. |
本系統中英文摘要資訊取自各篇刊載內容。