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題 名 | 強介電Pb(Zr,Ti)O[feb0]薄膜之磁控濺鍍製備及特性分析=Radio-Frequency Magnetron Sputtering and Properties of Ferroelectric Pb(Zr, Ti)O[feb0]Thin Film |
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作 者 | 孫裕昌; 陳嘉峰; 呂宗昕; | 書刊名 | 國立臺灣大學工程學刊 |
卷 期 | 82 2001.06[民90.06] |
頁 次 | 頁41-48 |
分類號 | 472.16 |
關鍵詞 | 鋯鈦酸鉛; 薄膜; 磁控濺鍍法; Lead zirconate titanate; Thin film; RF magnetron suttering; |
語 文 | 中文(Chinese) |
中文摘要 | 本研究乃藉由控制磁控濺鍍法之濺鍍壓力與靶材化學成份比例,以得到具有優良鐵電特性並可適用於強介電隨機存取記憶體 (Ferroelectric Random Access Memory) 之鈣鈦礦相 Pb(Zr, Ti)O3 薄膜。研究實驗中探討靶材中鉛含量及濺鍍壓力對薄膜特性的影響。實驗結果顯示,靶材中鉛過量的比例較高、濺鍍氣壓較低, 所得到的薄膜結晶性較佳,且表面顯微結構較平坦緻密。以鉛過量50% 的靶材於 20 mtorr 氣壓下濺鍍所得的薄膜,於500°C 退火僅有燒綠石相生成,但當退火溫度升高至700°C 時,燒綠石相全部轉變為純相鈣鈦礦相Pb(Zr, Ti)O3。當薄膜厚度僅95nm 時,其 P-E 曲線於施加電壓3.5V 時即達可飽和狀態。操作電壓 5V 時,2Pr 值為 32 mC/cm2,2Ec 值為 200 kV/cm,並且在 106 次極化反轉下,薄膜無疲勞現象產生,適合應用於低操作電壓之非揮發性記憶體。 |
英文摘要 | Ferroelectric thin films have been widely expected for nonvolatile ferroelectric random access memory (FeRAM) application. The deposition processes of Pb(Zr,Ti)O3 (PZT) thin films have been developed by using RF-magnetron sputtering method. The crystallization behavior and the quality of thin films were closely related to the sputtering pressure and the PbO content in the target. In this study, the characteristic of the thin films properties were analyzed by varying the sputtering pressure and the excess PbO content in the target. By adjusting the sputtering process conditions, high quality Pb(Zr, Ti)O3 thin films were obtained. The well-crystallized perovskite thin films with better surface morphology were prepared with higher lead content in the target and lower sputtering pressure. At crystallized temperature below 500°C the crystalline structure was pyrochlore phase only. As the annealing temperature increased to 700°C, pyrochlore phase fully transformed into perovskite Pb(Zr,Ti)O3 phase. The Pb(Zr, Ti)O3 films with film thickness about 95 nm exhibited relatively good ferroelectric properties, the saturation voltage was only 3.5V. With the operating voltage of 5V, the perovskite films exhibited the remanent polarization of 32 mC/cm2, the coercive field of 200 kV/cm, and nearly fatigue-free up to 106 fatigue cycles, suitable for the applications to the nonvolatile memories. |
本系統中英文摘要資訊取自各篇刊載內容。