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題 名 | 導電性薄膜之製程研究=A Study on the Conductive Thin Film Manufacturing Process |
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作 者 | 李文興; 林世聰; 胡清煌; | 書刊名 | 臺北科技大學學報 |
卷 期 | 34:1 2001.03[民90.03] |
頁 次 | 頁11-26 |
分類號 | 448.552 |
關鍵詞 | 濺鍍; 導電性薄膜; 射頻功率; 腔體反應壓力; 氣體流量; 溫度; Sputtering; Conductive metal thin films; RF power; Operating pressure; Flow rate; Temperature; |
語 文 | 中文(Chinese) |
中文摘要 | 本研究主要是以濺鍍(sputtering)法在矽晶片上製造導電性薄膜,探討相關的製程變數。主要是對薄膜製造時的變數:靶材種類、射頻功率、腔體反應壓力、氣體流量、濺鍍時間、濺鍍溫度與回火熱處理等,作一系統性的探討。探討的實驗變數範圍如下:射頻功率(100W-300W)、真空度(0.028-0.10 torr)、氣體流量(20-100 c.c/min)、濺鍍時間(10 min- 4 hrs)、濺鍍溫度(室溫-300℃)與回火真空熱處理(400℃)。 研究結果顯示:不同的靶材會產生不同的電漿顏色。另外不同的靶材出現電漿的時間也不一樣。較高的射頻功率,會顯著的提昇沈積率,縮短製程時間,然而過高的射頻功率也會對熱傳導性較差的陶瓷材料產生過熱的危險性,靶材會有產生融化和破裂的現象。相同的濺鍍條件,基本上沈積厚度是隨著時間的延長而呈線性增加,但是因為濺鍍層與基材間並不存在強而有力的化學鍵結,因此當鍍層厚度超過一定值後,勢必因為薄層本身的内應力超過介面結合力而剝離。但是若能增加基材溫度,則可增加濺鍍靶材元素與基材間形成較強的結合力,而可得較厚的薄膜。在較低溫度(室溫和100℃)所製得的薄膜經過真空回火熱處理後,薄膜原子將會自動進行重整產生收縮,導致薄膜產生龜裂的現象。綜合研究結果歸納出,在濺鍍製程參數為:低功率:100W、較高的基材溫度:300℃、腔體反應壓力:0.05 torr、氬氣進氣流量:100 sccm之條件下,最佳濺鍍厚度可高達12m。 |
英文摘要 | This research focused on the effects of processing variables of spulttering to grow thin films on the silicon wafers. Processing variables like target, Rf power, operating pressure, inlet-gas flow rate, sputtering time, substrate temperature, and tempering heat treatment were systematically investigated. The testing range of variables were R.F. power (100W-300W), Ar inlet-gas flow rate (20-100 sccm), operating pressure (0.025 torr-0.10 torr). The results showed that the plasma color of sputtering time, substrate temperature, and tempering heat treatment were systematically investigated. The testing range of variables were R.F. power (100 W-300 W), Ar inlet-gas flow rate (20 -100 sccm), operating pressure (0.025 torr-0.10 torr). The results showed that the plasma color of sputtering depended on the target material used. The needed time of producing stable plasma depended on the target material as well. With increasing R.F. power, the deposition rate of this film was improved pronouncedly. However, there existed a risk of destroying non-conductive target for R.F. power beyond a 150 W for corning glass. The thickness of thin films linearly increased with increasing deposition time. By this sputtering method, a strong chemical bond would not be formed at the interface between substrate and coating film. As long as the thickness of the film over a limit value, the internal stress existed in the film would exceed the bonding strength resulting in the depletion of the films. To obtain a thicker coating film, increasing the substrate temperature was necessary. The constituted atoms of the thin rearranged themselves after heat treatment. Shrinkage occurred and caused cracking. Grouping this research work, a best combination of processing variables were listed as follows: R.F. power = 100 W, substrate temperature = 300 °C, operating pressure = 0.05 torr, Ar inlet-gas flow rate =20 -100 sccm. A maximum 12 μm thick film was achieved under the described conditions. |
本系統中英文摘要資訊取自各篇刊載內容。