頁籤選單縮合
題 名 | 動態隨機存取記憶體單元中之冠狀電容的設計=Method for Fabricating a Crown-type Capacitor of a DRAM Cell |
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作 者 | 蔣忠誠; | 書刊名 | 修平學報 |
卷 期 | 2 2001.03[民90.03] |
頁 次 | 頁221-231 |
分類號 | 448.552 |
關鍵詞 | 冠狀電容; 犧牲層; 接觸開口; 選擇性蝕刻; 非等向性蝕刻; 介電層; Crown-type capacitor; Contact opening; Selectively etching; Anisotropically etching; Dielectric layer; Sacrificial layer; |
語 文 | 中文(Chinese) |
中文摘要 | 本文提出一種用於動態隨機存取記憶體單元中之冠狀電容的製造方法,該方法係包含下列步驟:首先製作一電晶體,並於該電晶體上形成一絕緣層;接著選擇性蝕刻以形成一接觸開口,並在絕緣層以及接觸開口上沉積一第一導電層;再接著形成一犧牲層,並選擇性蝕刻以僅在電晶體汲極上方處留下部分犧牲層以及部分第一導電層;然後全面沉積一第二導電層,且施行非等向性蝕刻以僅在該部分犧牲層兩側壁上留下部分第二導電層;其次移除該部分犧牲層,該部分第二導電層以及部分第一導電層係供同形成冠狀電容之下電極;最後依序形成一介電層以及冠狀電容之上電極。 |
英文摘要 | A method for fabricating a DRAM cell having a crown-type capacitor over a semiconductor substrate is presented. The method includes some steps as follows: (a) forming a transistor over the semiconductor substrate; (b)forming an insulating layer over the transistor; (c) selectively etching the insulating layer to form a contact opening; (d) forming a first conducting layer over the insulating layer and filling into the contact opening; (e) forming a sacrificial layer over the first conducting layer; (f) slectively etching the sacrificial layer as well as the first conducting layer; (g) forming a second conducting layer over the sacrificial layer as well as the insulating layer; (h) anisotropically etching the second conducting layer; (i) removing the sacrificial layer to form the bottom electrode of the crown-type capacitor; (j)forming a dielectric layer; and (k)forming the top electrode of the crown-type capacitor. |
本系統中英文摘要資訊取自各篇刊載內容。