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題名 | 微機電系統的感應耦合電漿設備與製程技術=Inductively Coupled Plasma Equipment and Technology in MEMS |
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作者姓名(中文) | 鍾震桂; | 書刊名 | 真空科技 |
卷期 | 13:4 2000.11[民89.11] |
頁次 | 頁17-24 |
分類號 | 448.57 |
關鍵詞 | 微機電系統; 感應耦合電漿; 設備; 製程; 蝕刻; Inductively coupled plasma; MEMS; ICP; |
語文 | 中文(Chinese) |
中文摘要 | 感應耦合電漿(Inductively Coupled Plasma,ICP)蝕刻技術在微機電系統(Micro-Electro-Mechanical System,MEMS)的應用非常廣泛,舉凡需要高深寬比或三維(3D)深微結構的感測器與致動器都會用到它。本文將介紹此感應耦合電漿設備與製程特色,尤其是製程上利用BOSCH專利的交替蝕刻與鈍化方法,所開發出高深寬比、高非均向性、高蝕刻深度、高蝕刻速率及高選擇比的矽深蝕刻製程技術,如深寬比>30的微結構,對光阻選擇比>70:1,垂直度>89.9°;與蝕刻深度>500μm的晶片穿透蝕刻,蝕刻速率可達3.75μm/min,其對氧化物選擇比>250。這是傳統IC蝕刻技術,利用同步蝕刻與鈍化方法所無法達到的。 |
英文摘要 | Inductively Coupled Plasma (ICP) etching technology has been widely used in the application of MEMS e.g. the sensors and actuators with high aspect ratio or three-dimensional microstructures. This work will introduce the characteristics of ICP equipment and technology using the BOSCH patent. We have also demonstrated the deep silicon etching for the high aspect ratio (>30) microstructure with nearly vertical profile (>89.9°) and through wafer etching (depth >500μm) with high etching rate up to 3.75 μm/min. The selectivity to photoresist and thermal oxide are very high, >70:1 and >250:1 respectively. This is quite different from the conventional IC etching process. |
本系統之摘要資訊系依該期刊論文摘要之資訊為主。