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題 名 | 高密度感應耦合電漿設備之電漿特性與其蝕刻機制研究=Characterization of Plasma in an Inductively-Coupled High-Dense Plasma Source and Its Etching Mechanism |
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作 者 | 蘇天佑; 徐享楨; 林維倫; 廖芳慶; 劉彥泓; 武東星; | 書刊名 | 真空科技 |
卷 期 | 13:4 2000.11[民89.11] |
頁 次 | 頁25-31 |
分類號 | 448.57 |
關鍵詞 | 感應耦合電漿設備; 電漿製程; 蝕刻; 積體電路元件; ICP; |
語 文 | 中文(Chinese) |
中文摘要 | 本論文係應用靜電式探針(Langmuir Probe)的檢測技術,探討在感應耦合式高密度電漿系統中,經由腔體壓力、ICP功率、RF功率以及氣體流量等參數的改變,量測其解離出來的電漿特性。由分析結果顯示不論上述何種參數之改變,其解離出的電漿密度皆在1011cm-3以上的等級。尤其當ICP功率由400W增加到1200W時,電漿密度可從1.3×1011上升至3.8×1011CM-3;反觀其它參數之改變,整體電漿密度的變化量為1.9×1011到3.2×1011cm-3之間,這顯示ICP功率對於電漿密度之影響能力最強。此外由於電漿之功率密度?離子通量(Ion Flux)與離子能量(Ion Energy)的乘積值,其同時兼具離子數量與能量之特性,因此對於以物理性為主的蝕刻製程(Ion-Driven Etch),尤其是在蝕刻率方面,具有決定性的影響。本論文亦以白金薄膜進行具體之ICP蝕刻驗證實驗,我們以改變腔體壓力為例,當其壓力由0.5Pa(5mTorr)增至2.0Pa(15 mTorr)時,其離子通量由5.06 × 1018cm-2s-1增至7.83 × 1018 cm-2s-1,而直流偏壓卻由101 V降至78 V,但電漿之功率密度仍由90.6 Wcm-2上升至111.5 Wcm-2,故其所對應之白金薄膜蝕刻速率亦由60nm/min變化為88nm/min。 |
英文摘要 | An inductively coupled plasma (ICP) reactor was used to model the etch mechanism in a high-density plasma (>1011 cm-3) system. Plasma density can be correlated with parameters such as ICP source power, rf chuck power, chamber pressure and gas flow rate. Under various plasma parameters applied, the plasma density can be measured by a Langmuir probe. It is found the ICP power has a large effect on the resulting plasma density, as compared with the other plasma parameters. The plasma density increased from 1.3 to 3.8 × 1011cm-3 as the ICP source power was raised from 400 to 1200 W. Moreover, the plasma power density (i.e. ion flux times ion energy) was confirmed to be the most influential factor for predicting the etch rate of ion-driven materials. As the argon pressure is raised from 0.5Pa (5 mTorr) to 2.0Pa (15mTorr), the ion flux increased from 5.06 to 7.83 × 1018 cm-2s-1 while the dc bias decreased from 101 to 78 V. The corresponding plasma power density is changed from 90.6 to 115.5 Wcm-2, which correlates well with the result of platinum etching rate varied from 60 to 88 nm/min. We have demonstrated the use of a power density model to explain the mechanism responsible for Ar high density plasma etching of the platinum films. |
本系統中英文摘要資訊取自各篇刊載內容。