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題 名 | Synthesis of Uniform and Large-Area Polycrystalline Diamond Films Using Microwave Plasma Chemical Vapor Deposition System |
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作 者 | Huang,Bohr-ran; | 書刊名 | 真空科技 |
卷 期 | 13:3 2000.09[民89.09] |
頁 次 | 頁38-47 |
分類號 | 440.34 |
關鍵詞 | 多晶鑽石膜; 微波電漿化學氣相法; 表面粗糙度; MPCVD; Uniform large-area polycrystalline diamond films; Surface roughness; |
語 文 | 英文(English) |
英文摘要 | This study deals with the syntheses of polycrystalline diamond films on 4-inch-diameter (100mm) silicon wafers using the microwave plasma chemical vapor deposition (MPCVD) system. The wafer was pretreated by the diamond powder nucleation method prior to deposition. Typical deposition conditions were shown as follows: CH4/H2, 4.5/300 seem; discharge pressure, 25 torr; deposition temperature, ~83℃; and deposition time, 3, 6 or 9 hours. The difference in surface roughness and thickness between the center and the edge of the polycrystalline diamond film was slightly increased as the deposition time increased. This phenomenon was also confirmed by Raman spectroscopy. The difference in surface roughness ranged from 2 to 5 nm. On the other hand, the difference in diamond film thickness ranged from 0.15 to 0.3μm . The oxygen (O) signal was observed in the spectra of all of the as-deposited diamond films. As the deposition time increased, the intensity of the oxygen (O) signal of diamond films decreased. It is suggested that the adsorption of oxygen and/or oxidation occurred primarily in diamond grain boundaries during the deposition of diamond film. It was found that uniform and good quality polycrystalline diamond films with reasonable deposition rates were successfully synthesized on 4-inch-diameter silicon wafers. |
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