查詢結果分析
來源資料
相關文獻
- 微波電漿化學氣相法沈積SiNC硬膜及其特性分析
- Transport Critical Current in Y-Ba-Cu-O Thin Films Prepared by DC Sputtering
- Recent Advances in the Synthesis and Properties of Amorphous and Crystalline Carbon Nitride
- 撥水加工處理對耐隆織物泡沫透濕防水加工之影響
- 混凝-薄膜過濾系統對膠體顆粒去除效率之探討
- 硒化鎘奈米半導體晶體的合成及在薄膜製備上的應用
- Adsorption and Desorption of Lysozyme and Albumin to Cibacron Blue 3GA Using Gel Beads and Membrane Discs
- 吹製薄膜成形用押出機的新技術
- Dynamic Response of a Spinning Disk Coupled with a Moving Beam System Subjected to Impulsive Excitation
- 銅薄膜應力量測
頁籤選單縮合
題名 | 微波電漿化學氣相法沈積SiNC硬膜及其特性分析=Growth and Characterization of SiNC Hard Film by MPCVD |
---|---|
作者姓名(中文) | 吳錦裕; 郭正次; | 書刊名 | 真空科技 |
卷期 | 14:2 2001.07[民90.07] |
頁次 | 頁27-33 |
分類號 | 440.34 |
關鍵詞 | 微波電漿化學氣相法; SiNC硬膜; 三元矽碳氮; 薄膜; |
語文 | 中文(Chinese) |
中文摘要 | 以微波電漿化學氣相法在矽基材上沈積三元矽碳氮(SiNC)薄膜,CH4/N2/H2氣源流量為100/10/0.0-10(sccm),矽晶圓條柱當固體源,沈積時間1/3至6小時。所合成之薄膜經掃瞄電子顯微術(SEM)、穿透式電子顯微術(TEM)、能量散佈X光能譜(EDS)、X光繞射儀(XRD)、霍式轉換紅外光譜儀(FTIR)、電子能譜化學分析儀(ESCA)、奈米級壓痕硬度(NIP)、I-V量測及陰極螢光法(CL)等儀器分析,其表面形貌屬於六面柱狀晶形,雖然與文獻中薄膜形貌一致,但晶體組成是二元Si-N,與文獻結果完全不同。從初期到後期之不同沈積時間薄膜,其形貌、結構、鍵結及特性都有不同,藉此了解到薄膜沈積機制。薄膜橫斷面SEM分析結果顯示:薄膜分為三層,最表層為大晶粒二元Si-N層,厚度約2μm,結構接近α-Si3N4,同時跟β- Si3N4及正方體(Tetragnoal-)Si3N4二種結構亦部份匹配,成分原子比:(Si/N)=1.9~3.9;次表層為SiNC層,厚度約200nm,屬於奈米多晶體埋在無晶質之結構,部分晶體經比對是屬於六方(Hexagonal)SiC;最內層是Si-O層。薄膜能隙為2.7~4.1 eV(461~303 nm)。薄膜之奈米壓痕硬度值在15~33Gpa,推導模數151~381Gpa;此量測值受基材效應影響。另外基材經各種溶液之振燙前處理後,發現經Si3N4粉末前處理之薄膜成核密度比末處理的基材提高百倍,顯示Si3N4粉末是優良的沈積晶種,此與目前沈積條件適於成長二元Si-N晶體之結論一致。 |
英文摘要 | The tmary SiNC films were deposited on Si wafer in a deposition time of 1/3 (6 hr by a microwave plasma chemical vapor deposition (MPCVD) system with CH4/N2/H3 [100/10/0-10 (sccm)] and additional Si chip. The films were examined by analysis techniques including AFM, TEM+EDS+ED, XRD, FTIR, SEM, ESCA and CL. The surface morphology of the film is the same hexagonal structure as which proposed in the literature, but the film compositions are binary Si-N instead of ternary SiNC. In addition, the films during growth appear with varied morphology, crystal structures, chemical bonding and properties with deposition time. The film cross section analysis indicates that the films were divided by three layers. They are as follows: The top layer is Si-N, of 2 μm in thickness and 1.9~3.9 in Si/N ratio, and the structure is much closer to α- Si3N4 than β- Si3N4 and tetragonal Si3N4. The next layer is SiNC and its thickness is ~200 nm. This layer essentially consists of nano-crystals embedded in termary SiNC amorphous matrix with crystal structure closing to SiC. The third layer is Si-O. The peak positions of the CL spectra ranged from 4.1 eV (303 nm) to 2.7 eV (461 nm) is observed obviously. The nano-hardness and the reduced modulus of the films measured by the nanoindentation method are around 15~33 Gpa and 150~381 GPa, respectively. Nucleation densities of the films with substrate scratch prior to film growth were compared with the films without substrate scratch. The result is a two-order of magnitude improving, and implies that the residues of Si3N4 powders act as the effective seeds for nucleation of Si-N crystals, which quite agrees with previous results of binary Si-N growth. |
本系統之摘要資訊系依該期刊論文摘要之資訊為主。