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題 名 | 低溫液相化學輔助法生長砷化鎵氧化薄膜之成長模型、特性及其應用=Growth Model, Properties and Application of GaAs Oxide Film Grown by Low Temperature Liquid Phase Chemical-Enhanced Method |
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作 者 | 周德威; 王會恆; 吳昭誼; 王永和; 洪茂峰; | 書刊名 | 真空科技 |
卷 期 | 13:3 2000.09[民89.09] |
頁 次 | 頁26-32 |
分類號 | 448.5 |
關鍵詞 | 砷化鎵; 氧化薄膜; 化學輔助低溫液相氧化法; |
語 文 | 中文(Chinese) |
中文摘要 | 一個稱為化學輔助低溫液相氧化法的技術已被用來生長特性穩定的砷化鎵的本質氧化薄膜。砷化鎵被該法氧化的初期況已被加以研究。根據X光-發射光譜(XPS)儀的測量,一個完整描述氧化薄膜的化學組成的模型已被建立。氧化薄膜內的組成包括有三氧化二鎵(Ga2O3)、三氧化二砷(As2O3)及元素砷(As)。氧化薄膜經過熱退火處理後的特性也被加以研究。相較於未作處理的氧化薄膜,熱退火的處理可促成較佳的電絕緣特性,諸如:氧化薄膜的崩潰電場可由3~4.5MV/cm提昇至4~5.5MV/cm,而在固定電場強度為1.5V/cm的電應力作用下的漏電流可由約1×10-4A/cm下降至3×10-6A/cm2。另一方面,吾人亦研究利用該技術所發展出來新的砷化鎵積體電路的元件隔離技術與選擇性氧化技術於砷化鎵N型通道空乏型金氧半場效應電晶體的研製。吾人發現氧深度可由開窗寬度加以控制外,其絕緣特性更優於非平面的島狀隔離法。而元件更具有良好的操作特性,諸如:最大外質轉移電導可以達到80mS/mm以上(閘極厚度為350A、閘極寬厚度╱閘極長為40μm/2μm)、元件偏壓在Vds=4v及Vgs=1V的條件下,在經過2000秒的測試,發現汲極電流的偏移小於0.4%、單位電流增益截止頻率(fT)為1.8GHz及最大所得增益頻率(fMAX)為5.2GHz(閘極厚度為350A、閘極寬厚度╱閘極長度為60μm /3μm、Vds=+4V、Vgs=0.4V)。 |
英文摘要 | A new method named liquid phase chemical-enhanced oxidation technique has been used to grow stable native films on GaAs. The initial stage of GaAs oxidation by this technique has been studied. According to the results of X-ray photoelectron spectroscopy, a complete model illustration the chemical composition of the grown oxide film has been established. The oxide film is found to the composite of Ga2O3, As2O3 and As. The characteristics of the grown oxide film followed by post-oxidation annealing are investigated. Better electrical insulating properties compare with as-grown oxide film has been also obtained We found that breakdown field of oxide had been improved from 3~4.5Mv/cm to 4.~5.5Mv/cm, and leakage current had been reduced from 1×10-4 a/cm2 to 3×10-6 under electrical of 1.5V/cm. Also, A new device device planaried isolation and selective oxidation process by using this technique to fabricate nchannel depletion mode GaAs metal-oxide-semiconductor field effect transistor are proposed. The depth of isolation (oxide) area can be well controlled by the window width of mask. As compared with mesa isolation, good insulating characteristics are achieved. The devices show good performance, such as a transconductance larger than 80 ms/mm (gate oxide thickness of 350 A, gate width/gate length of 40μm /2μm), the shift of drain current less 0.4% can be obtained after operating for a period of 2000 seconds and at stress conditions of Vds=+4V and Vgs=1V, unity current gain cut off frequency (fT) and maximum available gain frequency (fMAX) of 1.8 Ghz and 5.2 GHz (gate oxide thickness of A, gate width/gate length of 60μm/3μm, Vds=+4V and Vgs=0.4V), etc., can be obtained. |
本系統中英文摘要資訊取自各篇刊載內容。