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題 名 | Composition Determining Mechanism in Synthesis of Silicon Carbide Films from SiH[feaf]Cl[feaf]/C[feaf]H[feaf]Chemical Vapor Deposition System=二氯矽甲烷/乙炔化學氣相沉積系統合成碳化矽薄膜的組成決定機構 |
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作 者 | 洪儒生; 吳常明; | 書刊名 | Journal of the Chinese Institute of Chemical Engineers |
卷 期 | 31:1 2000.01[民89.01] |
頁 次 | 頁79-89 |
分類號 | 460.02 |
關鍵詞 | 二氯矽甲烷; 乙炔化學氣; 沉積系統; 碳化矽薄膜; Silicon carbide films; Chemical vapor deposition; Dichlorosilane; Acetylene; Films growth path; |
語 文 | 英文(English) |
中文摘要 | 本文乃探討二氯矽甲烷/乙炔為化學氣相沉積先驅物在合成碳化矽薄膜時的薄膜成長機構。碳化薄膜成長實驗是在一水平熱壁式反應器進行。反應溫度在攝氏八百度以及總壓為九毫米汞柱下,二氯矽甲烷的進料濃度必須過量才能獲得碳化矽薄膜。由增加反應器的體積對表面積比值發現,成長薄膜中的碳矽組成比會隨之變大。此一變化與原料先驅物的反應途徑有關。經由一稱為“macro/microcavity”的實驗手法分析結果發現,薄膜成長途徑為:〈1〉二氯矽甲烷直接與吸附的乙炔在基材表面反應並以4.0×10¯[93bf]的附著機率形成碳化矽薄膜;(2)二氯矽甲烷先氣相分解為二氯化矽的中間產物,之後再與乙炔反應並以0.1的附著機率形成過剩的碳沈積。 |
英文摘要 | The reaction paths that determine the film composition of silicon carbide (SiC) in a chemical vapor deposition system using SiH₂Cl₂/C₂H₂ as the reactant gases are investigated. Deposition reaction has been performed in a horizontal hot-wall tubular reactor where SiC films are produced at 1073 K and 9 torr total pressure in the presence of excess SiH₂Cl₂. By varying the reactor volume-to-surface ratio (V/S), the composition ratio of carbon to silicon of the films in- creases with V/S. The change of the film composition is attributed to the variation of the film growth paths of the reactant gases. An experimental method named the macro/microcavity is applied to evaluate the film growth paths and their contribution to the film growth. A growth mechanism is proposed as follows: (1) SiH₂Cl₂, directly diffuses to the substrate and reacts with the adsorbed C₂H₂ with a sticking probability of 4.0×10¯[93bf] to form stoichiometric SiC, (2) SiCl₂, an initial product of the gas-phase decomposition of SiH₂Cl₂, reacts with C₂H₂ with a sticking probability of 0.1 and causes excess carbon deposition. |
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