頁籤選單縮合
題名 | Properties of N-doped P-ZnO Films Deposited Using Plasma Enhanced Atomic Layer Deposition=電漿增強式原子層沉積法成長摻雜氮原子之P型氧化鋅薄膜特性分析 |
---|---|
作者姓名(中文) | 林渝璋; 郭俐君; 李欣縈; 溫武義; | 書刊名 | 真空科技 |
卷期 | 24:4 2011.12[民100.12] |
頁次 | 頁50-56 |
分類號 | 448.552 |
關鍵詞 | 摻雜氮之氧化鋅; 電漿增強式原子層沉積系統; Nitrogen-doped ZnO; Plasma enhanced atomic layer deposition; |
語文 | 英文(English) |
中文摘要 | 本研究以電漿增強式原子層沈積 (PEALD) 系統沈積摻雜氮之氧化鋅薄膜於藍寶石基板上,並且以 75ºC 至 250ºC 不同基板溫度條件下,成長摻雜氮之氧化鋅薄膜,其中電漿系統可將 NH3 氣體分解成 N、NH 及 NH2 以做為氮之摻雜源,最後利用快速熱退火 (RTA) 系統在 900ºC 氧氣環境下退火,將薄膜中的氫離子鍵結打斷。此外,透過霍爾量測、低溫光激螢光量測系統、X 光繞射分析儀及 X 射線光電子能譜分析儀證明其為 p 型氧化鋅薄膜,並於基板成長溫度為 100ºC 時,量測結果可得最高之電洞濃度 4.04×1017 cm-3 及最低的電阻值 52.10Ω-cm 與移動率 0.55 cm2/V-s。 |
英文摘要 | Plasma enhanced atomic layer deposition (PEALD) technique was used to deposit nitrogendoped (N-doped) ZnO thin films on sapphire substrate. The nitrogen-doped ZnO thin films were deposited at various substrate temperatures from 75oC to 250oC. The plasma source was used to decompose the ammonia (NH3) gas and form N, NH and NH2 as the nitrogen dopant source. The post-annealing treatment was conducted to remove the hydrogen ions in the as-grown nitrogen-doped ZnO fi lms at 900oC, in oxygen ambience by a rapid thermal annealing (RTA) system. The electrical and optical properties of the N-doped ZnO films were characterized by Hall measurements, low temperature photoluminescence (LTPL) spectroscopy and X-ray photoelectron spectroscopy (XPS),in order to prove the thin fi lm was the p-type ZnO. The highest hole concentration of 4.04×1017 cm-3, the lowest resistivity of 52.10 Ω-cm, and the hole mobility of 0.55 cm2/V-s for N-doped ZnO can be obtained at substrate temperature of 100 oC. |
本系統之摘要資訊系依該期刊論文摘要之資訊為主。