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題名 | 電漿輔助原子層沉積釕與氮化鉭薄膜製程研究=Ru and TaNx Thin Films Grown by Plasma Enhanced Atomic Layer Deposition |
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作者 | 劉柏亨; 蕭健男; 柯志忠; | 書刊名 | 真空科技 |
卷期 | 26:1 2013.03[民102.03] |
頁次 | 頁21-26 |
分類號 | 448.552 |
關鍵詞 | 感應耦合式電漿輔助原子層沉積系統; 釕; 氮化鉭; Inductively coupled plasma atomic layer deposition; PEALD; Ruthenium; Ru; Tantalum nitride; TaNx; |
語文 | 中文(Chinese) |
中文摘要 | 本研究以自製感應耦合式電漿輔助原子層沉積系統製鍍釕(Ru)與氮化鉭(TaNx)薄膜,Ru前驅物為bis(Cyclopentadienyl)ruthenium(RuCp2)與Bis(Ethylcyclopentadienyl)ruthenium(RuEtCp2),還原劑為氬氧(Ar/O2)混合電漿,通入於腔體中進行氧化作用。前驅物RuCp2通入時間為0.2秒時,所製鍍之Ru薄膜成長速率約為0.01 nm/cycle,其管路呈現阻塞現象。實驗中另外使用RuEtCp2前驅物以提升反應氣體量,並於基板載台上增加直流偏壓(dc-bias),結果顯示於製程溫度300 °C時,Ru薄膜成長速率可改善至0.1 nm/cycle,電阻率亦下降至11 μΩ cm。TaNx前驅物為Ta[N(CH3)2]5(PDMAT),還原劑為氬氨(Ar/NH3)混合電漿,所製鍍之Ta3N5薄膜為N-rich之非結晶(Amorphous)結構,電阻率亦較高。Ta3N5薄膜於PDMAT通入時間2秒以上時達到飽和,其成長速率約為0.058 nm/cycle。 |
英文摘要 | The thin films of Ru and TaNx were deposited by home-built inductively coupled plasma atomic layer deposition (PEALD) system. The Ru metal-organic precursor used is bis(Cyclopentadienyl)ruthenium (RuCp2) and Bis(Ethylcyclopentadienyl) ruthenium (RuEtCp2) and introduced into chamber and then oxidized by the high energy reductive Ar/O2 plasma in this PEALD system. The growth rate of the Ru films is 0.01 nm/cycle as the RuCp2 pulse time is more than 0.2 s. However, the solid precursor RuCp2 could be jammed the piping. With increased dc-bias power of 5 W, the growth rate of the Ru films is 0.1 nm/cycle as the RuEtCp2 pulse time is 4 s. The resistivity of Ru thin film prepared at 300°C is 11 μΩ cm. PEALD of TaNx films from Ta[N(CH3)2]5 (PDMAT) and Ar/NH3 plasmas is reported. It is found that amorphous Ta3N5 films with a high resistivity can be deposited using a Ar/NH3 plasma. The growth rate of the Ta3N5 films is 0.058 nm/cycle as the PDMAT pulse time is more than 2 s. |
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