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題 名 | 具高低研磨面晶圓之化學機械研磨模型的探討=The Chemical-Mechanical Polishing Model of Patterned Wafer Planarization |
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作 者 | 張美雲; 陳柏廷; 吳尚真; 陳達仁; | 書刊名 | 國立臺灣大學工程學刊 |
卷 期 | 77 1999.10[民88.10] |
頁 次 | 頁57-71 |
分類號 | 448.57 |
關鍵詞 | 化學機械研磨; 具高低研磨面晶圓; 研磨時間; CMP; Patterned wafer; Polishing time; |
語 文 | 中文(Chinese) |
中文摘要 | 本文旨在建立化學機械研磨 (chemical mechanical polishing) 之模型, 其中以研磨的機械效應為重點,考慮表面具高低差之晶圓 (patterns) 的研磨特 性。文中利用運動倒置的觀念,建立一個開迴路的等效模型,進而求得研磨路徑 的表示式。在線性磨耗的假設下,推導出晶圓高低研磨面之研磨量的時間相關公 式。並配合實驗的資料,取得必要的研磨參數,以建立完整的研磨模型。利用此 研磨模型,可以獲得在給定研磨條件下所需的研磨時間表示式,顯示化學機械研 磨在局部點的研磨需求。本文的結果,能有效提供改善化學機械研磨製程的研磨 參數調整的方向 |
英文摘要 | A polishing model that considers the pattern on a wafer surface during chemical mechanical polishing (CMP) is developed. Based on the concept of kinematic inversion, a three-link manipulator, which is equivalent to the polishing configuration of the CMP, is established. It is shown that the time-dependent step height between upper and lower feature surfaces can be obtained as function of wear coefficient, loading density coefficient, the hardness of polishing pad and the polishing path. It is also shown that the required polishing time can be obtained by considering the decrement of step height at a given polishing condition. The necessary parameters such as the wear coefficient and loading density coefficient are evaluated by fitting to experimental data and the complete model is presented. |
本系統中英文摘要資訊取自各篇刊載內容。