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題名 | 金屬與複晶矽接觸系統之氫(氧)被覆處理之研究=A Study of Hydrogen (Oxygen) Passivation Effects on the Metal/Polsilicon Contact System |
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作者姓名(中文) | 楊炳章; 楊文祿; 李信儒; | 書刊名 | 逢甲學報 |
卷期 | 35 1999.06[民88.06] |
頁次 | 頁129-136 |
分類號 | 448.552 |
關鍵詞 | 複晶矽; 接觸電阻; 被複; Polysilicon; Specific contact resistivity; Passivation; |
語文 | 中文(Chinese) |
中文摘要 | 在本研究中,吾人發現鋁對複晶矽的接觸系統中, 由於電漿氫化的處理,接觸電 阻獲得十倍左右的改善。一般認為改善接觸電阻的原因不外是雜質濃度的提高和位能障的降 低, 因此我們藉由鋁( 1 %矽)╱複晶矽蕭基二極體結構被電漿氫化來探討位能障變化問 題,以及從次離子質量儀( SIMS )研究雜質濃度的分佈曲線。研究發現藉由氫被覆使得接 觸電阻降低並不是由於雜質濃度的改變或位能障的降低,而是電子移動率的改善;此意味著 鋁( 1 %矽)與複晶矽介面處的缺陷可藉由氫被覆的處理而減少。 此外,經過電漿氫化╱ 氧化處理之後對複晶矽薄電晶體特性的影響,也是研究討論的重點。 |
英文摘要 | In the paper, the specific contact resistivity (P �� ) of Al (1%Si)/n �� -polysilicon contact system improved about one order in magnitude due to the hydrogen plasma treatment is present. The high effective carrier concentration and lowbarrier height were usually thought to be the reasons of promoting the contact resistivity. Therefore, the barrier height change and concentration profile of Al (1%Si)/n-polysilicon Schottky diodes before/after hydrogen plasma treatment were examined. The results show that the improvement on P �� byhydrogen plasma treatment is not due to the above two reasons but caused by the increase of electron mobility. This means that the defect states within grain boundaries and interfaces of the polysilicon were reduced by the hydrogen pasivation. Furthermore, the effects of hydrogen/oxygen plasma treatments on the characteristics of polysilicon thin-film transistors were also investigated. |
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