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題 名 | The Initial Growth Mechanism of Liquid Phase Deposition Silicon Dioxide=液相沉積二氧化矽之初始成長機制 |
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作 者 | 盧維新; | 書刊名 | 吳鳳學報 |
卷 期 | 4 1996.05[民85.05] |
頁 次 | 頁62-73 |
分類號 | 341.37 |
關鍵詞 | 矽氟酸; 液相沉積; 液相沉積二氧化矽; H[feaf]SiF[feb8]; Liquid phase deposition; LPD-SiO[feaf]; |
語 文 | 英文(English) |
中文摘要 | 在矽氟酸溶液中只加水成長之液相沉積二氧化矽(LPD-SiO2)已被討論,成長液 相沉積二氧化矽沉積之速率是矽氟酸濃度和溫度的函數,但是此沉積之速率與基板表面結構 無關,液相沉積二氧化矽之初始延遲時間可用轉移模型來解釋。 |
英文摘要 | Silicon dioxide grown by low-temperature liquid phase deposition with H �� O addition only has been discussed. The deposition rate of LPD-SiO �� is a function of the concentration of H �� SiF �� and H �� O and the temperature of growth solution but is independent of the compositions of substrate surface. The initial growth delay time of LPD-SiO �� can be explained by a transition model proposed in this work. |
本系統中英文摘要資訊取自各篇刊載內容。