查詢結果分析
來源資料
相關文獻
- The Characteristics of Fluorinated Gate Oxides Prepared by Liquid Phase Deposition Following Rapid Thermal Processing in O[feaf]and/or in N[feaf]O Ambient
- Effect of Oxidation Pressure on the Characteristics of Fluorinated Thin Gate Oxides Prepared by Room Temperature Deposition Followed by Rapid Thermal Oxidation
- Edge-Illuminated Metal-Oxide-Semiconductor (MOS) Solar Cells with Oxides Prepared by Liquid Phase Deposition Method
- Incorporation of Fluorine Atoms into Rapid Thermal Thin Gate Oxides by Liquid Phase Deposition
- Formation of Silicon Dioxide Film on Gallium Arsenide by Deposition Method in Liquid Phase at Very Low Temperature
- 溶液相沉積銅金屬奈米粉末與銅膜的新方法
- 薄膜型太陽電池研究發展狀況
- A Low Temperature Improved Formation of Silicon Dioxide Films in Liquid Phase Deposition
- The Initial Growth Mechanism of Liquid Phase Deposition Silicon Dioxide
- 低溫液相沉積含氟二元氧化矽技術
頁籤選單縮合
題名 | The Characteristics of Fluorinated Gate Oxides Prepared by Liquid Phase Deposition Following Rapid Thermal Processing in O[feaf]and/or in N[feaf]O Ambient=結合液相沉積和快速熱處理製作之含氟閘極氧化層的特性 |
---|---|
作者 | 盧維新; | 書刊名 | 吳鳳學報 |
卷期 | 4 1996.05[民85.05] |
頁次 | 頁45-61 |
分類號 | 341.37 |
關鍵詞 | 液相沉積; 快速熱處理; 含氟閘極氧化層; Liquid phase deposition; Rapid thermal processing; Fluorinated gate oxides; |
語文 | 英文(English) |
中文摘要 | 先液相沉積(LPD)後在氧(O2)和╱或一氧化氮(N2O)環境中作快速熱處理( RTP )的方法,已被應用去製作含氟閘極氧化層,本論文中,此含氟閘極氧化層的製程是改 變液相沉積的時間並固定快速熱處理的時間, 吾人發現, 初始平能帶電壓( Flatband Voltage )和能帶中央介面陷阱( Midgap Interface Trap Density )隨著液相沉積成長 時間發生反轉現象( turnaround ),此現象可用二階段模型( Two Step Model )解釋, 除此之外,此閘極氧化層的抗輻射特性亦隨液相沉積成長時間發生反轉現象,在固定快速熱 處理的時間之下,液相沉積的時間為 30 分鐘是最佳條件,另外,此閘極氧化層的物理特性 也被討論,根據傅立葉轉換紅外線( FTIR )資料顯示,此閘極氧化層和傳統閘極氧化層比 較有較小的變型鍵( Strained Bonds )。 |
英文摘要 | The liquid phase deposition (LPD) following rapid thermal processing (RTP) in O �� (RTO) and/or in N �� O (RTN) treatments was used as a method to fabricate the fluorinated gate oxide. In this work, the fluorinated gate oxides are examined by varying the LPD growth times under a given RTO or RTN time. One can find that the initial flat-band voltage and midgap interface trap density of all devices exhibit a turnaround dependency on the LPD growth time which can be explained by a two step model. It is also observed that the radiation hardnesses of the fluorinated gate oxides show turnaround dependencies on LPD growth time. An optimum condition of LPD growth time of 30 min was found under a fixed RTP time. In addition, the physical properties of the fluorinated oxides prepared by LPD following RTP treatments are discussed. It was found that the fluorinated oxides show smaller amount of strained bonds in the strained layer of oxide than the conventional rapid thermal grown oxides according to the FTIR data. |
本系統之摘要資訊系依該期刊論文摘要之資訊為主。