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題名 | 非晶形硒恒溫熱退火後相結構之計算機理論模式分析=Study on the Computer Model Analysis of the Amorphous Selenium During the Thermal Annealing |
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作者 | 周榮泉; 鄭瑞福; | 書刊名 | 技術學刊 |
卷期 | 11:1 1996.03[民85.03] |
頁次 | 頁63-71 |
分類號 | 440.34 |
關鍵詞 | 非晶形硒; 恒溫熱退火; 相結構變化; 晶格鬆弛期; 晶粒成長; Amorphous selenium; Isothermal annealing; Phase transformation; Lattice relaxation; Grain growth; |
語文 | 中文(Chinese) |
中文摘要 | 本論文係用程式語言Borland C++並配合非晶材料理論來探討真空蒸鍍法製備的純非晶形硒在各種不同退火溫度下的相結構變化情形。分析參數有二:(1) 電導值參數C (傳導率指數先前因素σ0與e(β/k)的乘積) (2) 遷移率邊際波動最大值AEm。分析相結構變化階段概分為三:(1) 晶形鬆弛期 (2) 晶拉成長期 (3) 飽和後退火結晶期。模擬方式係依電導值計算出兩參數相對變化值,再以變化關係來分析各退火溫度間相結構變化關係及各階段材料內鍵結變化情形。分析結果發現各種不同退火溫度下的非晶形硒皆經歷以上三個變化階段,且退火溫度在343K以上時非晶形硒已經歷過晶格鬆弛期,另外也退火溫度愈高的環境下其晶粒成長的愈快,符合晶化速率的理論。 |
英文摘要 | In this paper, we use Borland C++ language to simulate the amorphous selenium (a-Se) variation of electrical conductivity with time at various isothermal annealing. The a-Se has been prepared by the vacuum evaporation method. In the annealing process, the a-Se is transformed by three steps which are lattices relaxation, grain growth and crystallization saturation. A reasonal model is proposed to simulate the variable condition of conductivity in the annealing process, the relationship between these three steps and the parameters C, ΔEm which effect the conductivity has been discussed. |
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