查詢結果分析
相關文獻
- InGaAs PIN Photodiodes on Semi-Insulating InP Substrate with Bandwidth Exceeding 14 GHz
- Gettering Effect of Praseodymium in Ga-rich or In-rich Liquid Phase Epitaxial Growth
- High Radiance InGaAsP/InP Lensed LEDs for Optical Communication Systems at 1.3nm
- Doping Properties of Pr[feaf]O[feb0]Associate InGaAs Epitaxy
- Improved Current-Voltage Characteristics on Four-Terminal GaAs and GaAs/InGaAs/GaAs Field-Effect Transistors
- Photoreflectance Characterization of Strained (111)B InGaAs/GaAs Quantum Well p-i-n Diode Structures
- Photoreflectance Characterization of InAlAs/InGaAs Heterojunction Bipolar Transitors with Various Spacer Thickness
- Hot Electron Resonant Tunneling in δ-Doped GaAs/InGaAs Field-Effect Transistors
- 光波導型寬波域高靈敏度感光元件
- 效能檢測功能之光塞取多工器網路系統
頁籤選單縮合
題 名 | InGaAs PIN Photodiodes on Semi-Insulating InP Substrate with Bandwidth Exceeding 14 GHz=在半絕緣性磷化銦基板上研製頻寬大於14GHz之砷化銦鎵檢光二極體 |
---|---|
作 者 | 戴廷安; 莊榮敏; 何文章; 陳建光; 施宏輝; 林嘉堅; 林蔚; 涂元光; | 書刊名 | 電信研究 |
卷 期 | 25:2 1995.04[民84.04] |
頁 次 | 頁213-221 |
分類號 | 448.552 |
關鍵詞 | 半絕緣性; 磷化銦基板; 砷化銦鎵; 檢光二極體; |
語 文 | 英文(English) |
中文摘要 | 我們已發展出一種簡單、高產出率的製程在半絕緣性磷化銦基板上研製低電容、正面 黨光型砷化銦鎵╱磷化銦正-本-負檢光二極體。藉由採用平式空橋方法及選擇性蝕刻技術,我 們成功地將在傳統導電性基板上所製作的檢光二極體常見的打線座臺電容給消除掉。除此之 外,我們也使用一種自動對準折除技術來製作負極凹臺及金屬性接觸,這同時也可降低通過負 極通道的串聯電阻。我們所製作的元件特性,在照直徑為30微米,-5伏特偏壓時,有低於0.2 奈安培的音電流,二極體的理想因子則為1.07。所測量到的光響應度,在波長為1.3微米及1.55 微米時,分別為0.79及0.78安╱瓦。對於電容-電壓特測量,我們可以得到相當低的0.137微 微法拉,而且對於對同面積所測得的數據與我們模據與我們模擬計算的電容值十分吻合。元件 的頻寬特性,我們利用光波元件分析儀測議結果可高達14.8?赫。而且我們析據元件的各項參 數來模擬元件動態響應頻寬的結果顯示,這是受限於載子通過空乏區的時?,而非元件的電容 值。這些特性顯示此元件具有適用於高速率積體電路之潛力。 |
英文摘要 | We have developed simple, high yield process to fabricate low-capcaitance, front-illuminated InGaAs/InP PIN photodiodes on semi-insulating InP substrate. By adopting the planar air-bridge approach and the selective etching technique, we have successfully eliminated the significant bondpad capacitance which is normal in conventional PIN photodiodes on conducting substrates. Besides, a self-aligned lift-off process was used for the n-contact recess and metallization. It also minimizes the series resistance through the n channel. The fabricated devices had a very low dark current below 0.2 nA at –5V for a device with 30μm photosensitive diameter. The measured responsivity is 0.79 A/W and 0.78A/W atλ=1.3μm and 1.55μm respectively. For the capacitance-voltage measurements, a very low capacitance of 0.137 pF was obtained for the 30μm diameter device and the measured data fit well with the diameter dependence. As for the frequency response characteristics, a 3-dB bandwidth of 14.8 GHz was obtained by using the HP 8703A optical component analyzer. According to our calculation of the dynamic response of the device, it is the carrier transit-time, not the device capacitance to limit the device frequency response. These characteristics reveal that device is potentially suitable for the OEIC application. |
本系統中英文摘要資訊取自各篇刊載內容。