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| 題 名 | 高頻磁控濺鍍在矽基板上成長氟化鈣薄膜 |
|---|---|
| 作 者 | 黃學經; 李中夏; | 書刊名 | 材料科學 |
| 卷 期 | 26:2 1994.06[民83.06] |
| 頁 次 | 頁149-153 |
| 分類號 | 440.34 |
| 關鍵詞 | 高頻磁控濺鍍; 氟化鈣; 絕緣膜; 矽基板; RF magnetron sputter; CaF[feaf]; Insulator; Thin film; |
| 語 文 | 中文(Chinese) |
| 中文摘要 | 本實驗採用高頻(13.6 MHz)磁控電漿濺鍍法,在矽基板上成長CaF�秘晾t 薄膜,實驗上所需的靶材以熱壓法(Hot Press)製作,由真空燒結而成,本論文探 討不同參數,例如:電漿功率、基板溫度、工作壓力等對薄膜的成長率、折射率、 化學成份計量比、結晶性等性質的影響。而所得結果發現在電漿功率密度為 15W/cm�插A基板溫度為250℃及反應壓力為10mtorr的條件下,能獲得高品質的CaF �索■丑C |
| 英文摘要 | Deposition of CaF�� thin films on Si by means of RF(13.6MHz) magnetron sputtering in an attempt to abtain a sharp semiconductor insulator interface is investigated. In this work, the deposition process is characterised as functions of growth temperature, reaction pressure and RF power. The thin film properties including the chemical composition, refractive index and microstructure are also determined. The results indicate that CaF�� thin films of good properties can be deposited at temperatures below 300℃ under a reaction pressure of < 10mtorr with the RF power density of about 15w/cm��.The details are presented in this paper. |
本系統中英文摘要資訊取自各篇刊載內容。