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題 名 | 雙異質結構平面型砷化銦鎵∕磷化銦p-i-n 檢光器之研製 |
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作 者 | 何文章; | 書刊名 | 電信研究 |
卷 期 | 22:4 1992.09[民81.09] |
頁 次 | 頁515-524 |
分類號 | 471.3 |
關鍵詞 | 平面型; 砷化銦鎵; 結構; 檢光器; 磷化銦; 雙異質; |
語 文 | 中文(Chinese) |
中文摘要 | 本文利用LPE成長一層較大能隙之覆蓋層於砷化銦鎵晶膜上,以期砷化銦鎵/磷化銦p-i-n檢光器之暗電流降至1nA以下,並使靈敏度獲得有效提升。所研製完成之雙異質結構平面型砷化銦鎵/磷化銦p-i-n檢光器係採用一次液相磊晶過程,分別於645℃、640℃及636.5℃依序長一層1.5μm□-磷化銦之緩衝層,一層3.5μm未摻雜三元砷化銦鎵之吸收層及一層0.5μm未摻雜四元磷砷化銦鎵之覆蓋層於S-摻雜(100)面之磷化銦基板上。爾後進行平面p-區之製作,先經於覆蓋層上以電漿加強式化學氣相沉積法(PECVD)、乾蝕刻(RIE)及照相石版術做出氮化矽擴散罩幕,再做閉管式鋅擴散。因此於逆偏壓5V時使得暗電流降到0.5nA以下。其元件特緎概如:於逆偏壓10V時,其暗電流為1.5±0.5nA、電容值為5.7±0.2pF、及表面未加抗反射層時對1.53μ光源之光電轉換比大於0.68A/W。而其崩潰電壓亦超過55V。 |
英文摘要 | Due to small bandgap and surface instability of InGaAs film, it was difficult to reduce the dark current to be less than 1 nA and to properly impure the sensitivity for an □□□/InP p-i-n photodetector without a wide-bandgap cap layer or proper surface passivation. In this paper, we present a study and fabrication of LPE grown double-heterostructure planartype □□□/InP p-i-n photodetector. Where a 1.5μm □-InP buffer layer, a 3.5μm undoped small-bandgap ternay absorption layer (□=0.75 eV) and a 0.5μm undopted wide-bandgap quaternary InGaAsP cap layer (□=1.1eV) were subsequently grown on an S-doped (100) InP substrate at 645℃, 640℃and 636.5℃, respectively in the LPE step. And the planar P-region was constructed by closed-tube Zn-diffusion though a PECVD deposited high-quality □□ diffusion m ask upon the cap layer. Therefore at reverse bia 5 volts, he dar current was successfully reduced to be as low as 0.8nA. The device performance was characterized: At reverse bias 10 volts, the dark current was 1.5±0.5nA, capacitance was 5.7±0.2 pF, and responsively without AR coating was greater than 0.68 A/W for 1.53μm. While the breakdown voltage was greater than 55V. |
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