頁籤選單縮合
| 題 名 | 改善射頻橫向擴散金氧半場效電晶體性能之寬汲極佈局設計方法=Performance Improvement in RF LDMOS Transistors by Using Wider Drain Contact |
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| 作 者 | 陳坤明; 黃國威; 陳俊豪; 林鴻志; 黃調元; | 書刊名 | 奈米通訊 |
| 卷 期 | 20:4 2013.12[民102.12] |
| 頁 次 | 頁16-20 |
| 分類號 | 448.552 |
| 關鍵詞 | 橫向擴散金氧半場效電晶體; 多指型佈局; 汲極接觸區; 漂移區電阻; 截止頻率; LDMOS; Multi-finger layout; Drain contact region; Drift resistance; Cutoff frequency; |
| 語 文 | 中文(Chinese) |
| 中文摘要 | 本研究提出一種射頻橫向擴散金氧半場效電晶體的新佈局結構;在多指型佈局中,我們將汲極接觸區的寬度增加使其大於通道寬度,此一寬汲極設計方法可以增加等效漂移區寬度,進而使漂移區電阻下降並抑制類飽和效應;我們發現寬汲極的多指型橫向擴散金氧半場效電晶體與標準的多指型元件相較起來,其擁有較低的導通電阻、較高的截止頻率、較高的最大震盪頻率、及較佳的功率性能。 |
| 英文摘要 | A new layout structure for RF laterally diffused metal-oxide-semiconductor (LDMOS) transistors has been proposed. In a multi-finger layout, the drain contact region was designed to be wider than the channel region. The wider drain increases the equivalent drift region width to reduce the drift resistance and suppress the quasi-saturation effect. We found that the wide-drain multi-finger LDMOS devices have lower on-resistance, higher cutoff frequency, higher maximum oscillation frequency, and better power performances than the standard multi-finger ones. |
本系統中英文摘要資訊取自各篇刊載內容。