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題 名 | 退火機制對於不同通道線寬之射頻複晶矽薄膜電晶體之影響=Effects of Annealing Process on RF poly-Si TFTs with Various Channel Wire Widths |
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作 者 | 胡心卉; 王凱民; | 書刊名 | 奈米通訊 |
卷 期 | 23:4 2016.12[民105.12] |
頁 次 | 頁15-21 |
分類號 | 448.552 |
關鍵詞 | 微波退火; 複晶矽薄膜電晶體; 截止頻率; Microwave annealing; MWA; Poly-Si TFTs; Cutoff frequency; |
語 文 | 中文(Chinese) |
中文摘要 | 本文探討射頻應用之三閘極複晶矽薄膜電晶體使用不同摻雜活化機制 :低溫微波退火製程或傳統高溫快速熱退火製程之直流與高頻特性。使用低溫微波退火製程不但能有效地活化摻雜物,且相較於快速熱退火製程,微波退火製程可有效地抑制短通道效應及穿透效應。此外,本文同時探討複晶矽薄膜電晶體單一通道寬度對高頻特性如 :截止頻率與最大震盪頻率之影響。從實驗結果可觀察到,較短通道長度及較窄單一通道寬度之複晶矽薄膜電晶體,在採用低溫微波退火製程下,其具有較大的驅動電流、較佳的閘極控制能力以及高頻特性。 |
英文摘要 | The high-frequency performance of trigate polycrystalline silicon thin-film transistors (poly-Si TFTs) with different annealing methods, rapid thermal annealing (RTA) or low-temperature microwave annealing (MWA) are investigated. MWA exhibits sufficient dopant activation efficiency, suppressed punch-through characteristics and good short channel effect control of poly-Si TFTs than does rapid thermal annealing. In addition, the variation of the cutoff frequency (fT) and the maximum oscillation frequency (fmax) with the width of the channel wire (W0) is also investigated. A poly-Si TFT with a short channel and a narrow channel wire, annealed using microwave, has a high driving current, a good gate controllability, and a better high-frequency performance than that annealed by rapid thermal annealing. |
本系統中英文摘要資訊取自各篇刊載內容。