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題 名 | 以邊界元素法研究化學機械研磨製程之維持環對晶圓表面不均勻度之影響=A Study on the Effect of a Retaining Ring Mechanism on the Nonuniformity of Wafer Surface Using Boundary Element Method for a Chemical Mechanical Polishing Process |
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作 者 | 林有鎰; 邱傳聖; 莊惟舜; | 書刊名 | 德霖學報 |
卷 期 | 27 2014.01[民103.01] |
頁 次 | 頁13-22 |
分類號 | 446.895 |
關鍵詞 | 化學機械研磨製程; 維持環; 邊界元素模式; 不均勻度; CMP; Retaining ring; Boundary element model; Nonuniformity; |
語 文 | 中文(Chinese) |
中文摘要 | 本文以Brebbia 和Dominquez 推導Somigliana 恆等式為基礎,導入位移和分佈力的基本解,在忽略 體力作用和考慮定元素的條件下,經離散化後而得到包括晶圓、維持環和研磨墊之邊界積分統御方程式 而建立了一套含維持環機構之化學機械研磨之二維軸對稱準靜態邊界元素模式。結果顯示(1)晶圓表面von Mises 應力分佈與實驗的表面材料移除率在靠近晶圓邊緣處皆有陡昇的突然變動,然後下降的現象,因此 利用邊界元素法得到的von Mises 應力,來預測晶圓表面之材料移除率是可行的,(2)研磨墊厚度越厚,不 均勻度越低,(3)維持環背壓增加,不均勻度下降,(4)晶圓與維持環間距愈大,不均勻度愈低。 |
英文摘要 | In this paper, based on the Somigliana’s identity derived by Brebbia and Dominquez, inferring to the fundamental solutions of displacement and traction, and under the conditions that the body force is ignored and constant element is used, the boundary integral governing equation involving in the wafer, the retaining and the pad after discretizing was derived. Thereafter, a 2D axisymmetrical quasic-static boundary element model for CMP involving a retaining ring mechanism was established. The results show that (1) the same tendency to possess that near the wafer edge, it would increase dramatically and then drop between the stress distribution achieved by boundary element method and the experimental material removal rate, it verifies that the boundary element method used in the stress analysis in a chemical mechanical polishing process to predict the wafer’s nonuniformity qualitively is feasible. (2) the larger the pad thickness is, the nonuniformity decreases. (3) the larger the ring load is, the nonuniformity decreases. (4) the longer the gap between the ring and the wafer is, the nonuniformity also decreases. |
本系統中英文摘要資訊取自各篇刊載內容。