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題 名 | 準分子雷射退火鍺膜之再結晶特性研究=Characterization of Polycrystalline Germanium Thin Films Produced by Excimer Laser Annealing |
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作 者 | 郭啟全; 葉文昌; 蕭致平; 鄭正元; | 書刊名 | 明志學報 |
卷 期 | 39:2 2008.01[民97.01] |
頁 次 | 頁9-14 |
分類號 | 448.552 |
關鍵詞 | 鍺膜; 再結晶; 準分子雷射退火; Germanium thin films; Recrystallization; Excimer laser annealing; |
語 文 | 中文(Chinese) |
中文摘要 | 本研究運用線上光學檢測技術於準分子雷射退火鍺膜期間之再結晶特性研究。研究發現,於超級橫向晶粒成長區域內,發現直徑1μm圓盤狀晶粒,其熔化期間約141~250ns。於光學檢測過程中,藉由穿透率的明顯變化,可以判定所照射準分子雷射能量密度已經大於鍺膜產生剝落門檻值。另外,本研究亦對鍺膜與矽膜之再結晶特性進行比較與分析。 |
英文摘要 | XeF excimer laster-induced melting and recrystalliztion dynamics of amorphous geranium (a-Ge) were investigated using time-resolved optical reflection and transmission (TRORT) measurements. Field-emission scanning electron microscopy and TRORT investigations revealed that the disc-shaped grain with a diameter of approximately 1μm is located in the super lateral growth regime with the melt phase duration of proximately 141~250ns. The significant change of transmissivity is a key phenomenon revealing the excessive excimer laser fluence during excimer laser crystallization by in-situ optical measurements. Difference in the melting and recrystallization phenomenon between Si and Ge thin films is also discussed. |
本系統中英文摘要資訊取自各篇刊載內容。