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題 名 | 準分子雷射正面與背面退火矽膜的再結晶特性研究=Characterization of Polycrystalline Si Films Produced by Front Excimer Laser Annealing and Back Excimer Laser Annealing |
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作 者 | 郭啟全; 葉文昌; 鄭正元; | 書刊名 | 明志學報 |
卷 期 | 38:2 2007.01[民96.01] |
頁 次 | 頁61-66 |
分類號 | 448.552 |
關鍵詞 | 準分子雷射退火; 光學檢測; 結晶; Excimer laser annealing; Optical measurements; Crystallization; |
語 文 | 中文(Chinese) |
中文摘要 | 本研究運用具奈秒解析度之原位即時光學檢測技術,研究準分子雷射正面退火(Front excimer laser annealing, Front ELA) 與背面退火(Back excimer laser annealing, Back ELA) 之 PECVD矽膜的熔化時間與結晶現象。結果顯示 900Å厚之矽膜受到準分子雷射正面/背面退火,具有相同之最長矽膜液相持續時間約110ns;除了矽膜表面熔化門檻值外,矽膜全部熔化與矽膜剝落之準分子雷射能量密度,Front ELA 均高於 Back ELA,主要原因係矽膜對於準分子雷射具有高反射率以及SiO2具有抗反射作用。 |
英文摘要 | Melting and crystallization phenomena of plasma enhanced chemical vapor deposition (PECVD) amorphous silicon films under front excimer laser annealing and back excimer laser annealing were investigated using in-situ optical measurements with nanosecond time resolution. The longest melt-phase duration of silicon films for front excimer laser annealing and back excimer laser annealing is the same, approximately 110ns for 900 Å-think silicon thin films. The complete-melting laser fluence and ablation laser fluence of amorphous silicon films for front excimer laser annealing are higher than those of back excimer laser annealing because amorphous silicon films has higher reflectivity and SiO2 films has anti-reflective characteristic for XeF excimer laser beam. |
本系統中英文摘要資訊取自各篇刊載內容。