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題 名 | The Growth and Characterization of SiGeC Alloy by Ultra-High-Vacuumchemical Vapor Deposition=利用UHVCVD來製造之矽鍺碳層其成長與特性 |
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作 者 | 李秋宗; 劉寅昕; 陳自強; 余承曄; 陳邦旭; 曾揚岱; 劉致為; | 書刊名 | 國立臺灣大學工程學刊 |
卷 期 | 93 民94.02 |
頁 次 | 頁3-10 |
分類號 | 448.552 |
關鍵詞 | 矽鍺碳; 乙烯; 異質接面二極體; 碳; SiGeC; C[feaf]H[feb2]; HBT; Carbon; |
語 文 | 英文(English) |
中文摘要 | 以乙烯作為成長源,利用UHVCVD 成長矽鍺碳層,有著低成本以及具有更便利的優勢。使用XRD、AFM、TEM、SIMS、PL、C-V 等儀器來分析成長在(100) 矽基板之矽鍺碳的特性。並且對以矽鍺碳作為基極的異質接面二極體進行研究。藉由XRD 可以觀測到矽鍺的壓縮應變會受到替代性的碳的抵銷作用。也藉由SIMS 以及XRD 來估計替代性的碳的數量值。利用SIMS 可以明顯觀察到碳具有抑制硼的外擴散作用。由XRD 的量測結果具有較寬的波形和較小的強度,藉此可知矽鍺碳有較差的結晶。隨著碳濃度的增加使得矽鍺碳的表面粗糙度也會增加。隨著乙烯量的增加,藉由NP 以及OP 可以觀察到PL 的強度減少。矽鍺的NP 極值較矽鍺碳稍高,有可能是因為矽鍺的晶格受到替代性的碳的作用而舒張。抑制硼的外擴散作用反映在SiGeC/Si 異質接面二極體與SiGe/Si 異質接面二極體的汲極電流增加量的比較上。在異質接面二極體的閃爍干擾是由缺陷造成,而且矽鍺碳的異質接面二極體有較強余矽者異質接面二極體的干擾強度。對異質接面二極體來說,有空隙的碳也會增加基極的再結合電流。有空隙的碳對於矽者碳的光電特性都會有著負面的影響。 |
英文摘要 | SiGeC layers were fabricated by ultrahigh-vacuum chemical-vapor deposition using C2H4 as a precursor with the advantages of low cost and convenient facility preparation. The SiGeC layers on Si (100) substrates were characterized by x-ray diffraction, atomic force microscopy, transmission electron microscopy, secondary ion mass spectrometry, photoluminescence, and capacitance-voltage measurement. The heterojunction bipolar transistors (HBTs) using this SiGeC base were also studied. The strain compensation of SiGe by substitutional carbon was observed by XRD. The substitutional carbon ratio the total concentration was estimated by XRD and SIMS. The suppression of boron outdiffusion was clearly observed by SIMS. The SiGeC layer was poor crystallization, indicated by broaden profile and weak diffraction intensity in XRD spectrum. SiGeC surface roughness increases with the increasing carbon concentration. Significant decreases of PL intensity are observed at both NP (non-phonon) and TO (transverse optical phonon) peaks as the C2H4 flow increases. The NP peak of SiGeC is slightly higher than SiGe, and it could be induced by the relaxation of SiGe lattice at the presence of substitutional carbon. The retardation of boron outdiffusion reflects on the collector current enhancement of SiGeC/Si HBTs as compared to SiGe/Si HBTs. The flicker noise is induced by the defects in the HBTs, and the base current of SiGeC HBTs shows a higher (~ 8 X) noise density (SIB) than SiGe HBTs. The interstitial carbon also increases the base recombination currents for the HBTs as compared to SiGe HBTs. All indicate that interstitial carbon has detrimental effects on the optical and electric properties of SiGeC. |
本系統中英文摘要資訊取自各篇刊載內容。