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題 名 | 二維聲子晶體與表面聲波元件製程之整合=Integration and Fabrication of 2D Phononic Crystals and Surface Acoustic Wave Micro Devices |
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作 者 | 顧可斌; 謝志誠; | 書刊名 | 農業機械學刊 |
卷 期 | 15:3 民95.09 |
頁 次 | 頁15-22 |
分類號 | 448.57 |
關鍵詞 | 聲子晶體; 表面聲波元件; 微機電製程; Phononic crystals; Surface acoustic wave devices; MEMS fabrication; |
語 文 | 中文(Chinese) |
中文摘要 | 本研究運用創新之方式將表面聲波元件與二維聲子晶體之面型微加工與體型微加工製程予以整合。其中,將聲子晶體結構以微製程製作於一對微米級表面聲波元件之發射器與接收器之間,兩端之發射器與接受器係由叉指狀換能器組成,沈積在層狀壓電薄膜之上。聲子晶體之圓孔直徑為6.0um,深度為20um,深寬比大於3,由於叉指狀換能器所產生之波長為間距之4 倍,為了將頻溝限制在數百MHz範圍內,故依所欲產生之表面聲波之中心頻率,將叉指狀換能器之電極間距訂在3.4um至9.0um之範圍。本研究在電鍍液中加入添加劑聚乙二醇,成功地完成微米級、高深寬比之聲子晶體孔洞之電鍍填充。 |
英文摘要 | In this paper, we present the integration and fabrication of innovative phononic crystals integrated with two sets of interdigital transducer (IDT) for frequency band selection of surface acoustic waves (SAW). The prohibited bandwidth has been verified by fabricating the phononic crystals between a micromachined SAW resonator and a receiver. Both the resonator and receiver are composed of IDT electrodes deposited and patterned on a thin piezoelectric layer. To confine the prohibited bandwidth on the order of hundred MHz, the diameter of the circular pores in phononic crystals is designed to be 6 micron and the aspect ratio of each pore is 3:1. To maximize the power transduction from IDT electrodes to SAW, the spacing between two interdigits is one-fourth the wavelength of SAW. Specifically, the spacing ranges from 3.4 microns to 9.0 microns, depending on the central frequency. Both surface and bulk micromachining are employed and integrated to fabricate the crystals as well as SAW resonator and receiver altogether. With PEG additives in the electrobath, we successfully accomplish filling micro-level and high aspect ratio pores in 2-D phononic crystals by copper plating. |
本系統中英文摘要資訊取自各篇刊載內容。