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題 名 | 線上即時檢測技術於準分子雷射退火非晶矽膜=Observation of Crystallization Phenomena during Excimer Laser Annealing Using in Situ Optical Reflectivity and Transmissivity Measurement |
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作 者 | 郭啟全; 葉文昌; 陳佳斌; 鄭正元; | 書刊名 | 明志學報 |
卷 期 | 38:1 民95.06 |
頁 次 | 頁35-41 |
分類號 | 440.12 |
關鍵詞 | 準分子雷射退火; 線上檢測技術; 爆炸結晶; 結晶機制; Excimer laser crystallization; In situ optical reflectivity and transmissivity measurement; Explosive crystallization; Crystallization mechanism; |
語 文 | 中文(Chinese) |
中文摘要 | 本研究建立奈秒(ns)解析度之光學檢測技術於矽膜在準分子雷射結晶化期間,即時進行反射率及穿透率量測來診斷矽膜熔化與凝固之再結晶行為,並藉由SEM觀察矽膜結晶後之顯微組織。實踐結果發現,於25ns脈衝持續時間(pulse duration) 之XeF準分子雷射退火 90nm 厚之非晶矽膜同時,可以運用CW He-Ne雷射檢測出爆炸結晶(explosive crystallization, EC) 現象,此技術將可使準分子雷射於矽膜結晶化過程具操控性並即時診斷出矽膜結晶化品質。 |
英文摘要 | XeF excimer laser induced melting and recrystallization of amorphous silicon has been investigated by means of in-situ on-line nanosecond time-resolved reflectivily and transmisson measurements with nanosecond time resolution. The explosive crystallization phenomena are observed for 90nm thick amorphous silicon SiO₂ deposited on non-alkali glass substrate by CW He-Ne probe laser upon 25ns pulse duration of excicmer laser. Three distinct regrowth regimens are elucidated in terms of different excimer laser fluence. The microstructure analysis of the excimer laster irradiated region was performed via scanning electron microscopy. |
本系統中英文摘要資訊取自各篇刊載內容。