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題名 | Temperature-dependent Piezoreflectance Study of Re-doped WSe[feaf]Single Crystals=二硒化鎢單晶摻雜錸的溫度變化壓電調制研究 |
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作者姓名(中文) | 胡勝耀; | 書刊名 | 東南學報 |
卷期 | 28 2005.06[民94.06] |
頁次 | 頁193-199 |
分類號 | 448.57 |
關鍵詞 | 壓電調制; 摻雜; 激子躍遷; Piezoreflectance; Doping; Exciton transition; |
語文 | 英文(English) |
中文摘要 | 本文章是以溫度變化壓電調制的方法來對二硒化鎢單晶摻雜錸(Re)的單晶在1.4到2.4 eV的能量範圍進行溫度變化的近能帶邊際的激子躍遷研究。摻雜錸的單晶可以用來作凡得瓦面(E⊥c; k∥c)的壓電調制。對於壓電調制下所得到的激子A和激子B躍遷,我們可以用勞倫茲振蕩器模式來和無摻雜的二硒化鎢單晶進行線形吻合比較。經由此項研究一個基本的激子躍遷位置和能帶架構可以同時被正確的求得。 |
英文摘要 | We have recorded temperature-dependent piezoreflectance (PzR) spectra from 15 to 300 K in the energy range of 1.4 to 2.4 eV for WSe₂ single crystals with Re impurity to examine the effect of dopant on the near band-edge excitonic transitions. Freshly cleaved van der Waals planes (E⊥c; k∥c) PzR measurements was made possible by the samples of Re-doped WSe₂. The excitonic transitions A and B for k∥c configurations have been studied in terms of Lorentzian oscillators compoaring with that of the updoped samples. The basis for assignment of excitonic trainsition energies is determined accurately and a probable energy-band structure is constructed. |
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