查詢結果分析
來源資料
相關文獻
- Electrolyte Electroreflectance Study of Re-doped WSe[feaf] Single Crystals
- Temperature-dependent Piezoreflectance Study of Re-doped WSe[feaf]Single Crystals
- δ摻雜電子元件與傳統電子元件特性之比較
- The Fabrication of High-Speed and High-Power InGaAs/GaAs Field-Effect Transistors Grown by MOCVD
- Schottky Barrier Diodes with Undoped and Doped Polyacetylene
- Applications of Inverted Doping on Modulation-Doped Field-Effect Transistors
- Symmetric Delta-Doped InGaAs/GaAs Field-Effect Transistors with Graded Heterointerface
- Electrical Characteristics of In0.5Ga0.5P/GaAs Heterostructure-Emitter Bipolar Transistors Using Spacer Layers
- 導電性摻合膜之製備及微觀結構的分析研究
- Doped-Channel SiGe Heterostructure Field-Effect Transistor
頁籤選單縮合
題名 | Electrolyte Electroreflectance Study of Re-doped WSe[feaf] Single Crystals=二硒化鎢單晶摻雜錸的電解液電場調制研究 |
---|---|
作者姓名(中文) | 胡勝耀; | 書刊名 | 東南學報 |
卷期 | 27 2004.12[民93.12] |
頁次 | 頁227-233 |
分類號 | 448.5 |
關鍵詞 | 摻雜; 電解液電場調制; 激子躍遷; Electrolyte electroreflectance; Doping; Excition transition; |
語文 | 英文(English) |
中文摘要 | 本文章是以電解液電場調制的方法來對二硒化鎢單晶摻雜錸(Re)的效應在1.4到3.5eV的能量範圍進行室溫的近能帶邊際和高能帶的激子躍遷。摻雜錸的厚樣品可以用來作凡得瓦面(E?c; k∥c)和側面(E?c, E∥c; k?c)的電解液電場調制。對於k?c和 k∥c的兩種架構下所得到的非等向性激子A和激子B躍遷,我們可以用勞倫茲振盪器模式來和無摻雜的二硒化鎢單晶進行線形吻合比較。經由此項研究一個基本的激子躍遷位置和能帶架構可以同時被正確的求得。 |
英文摘要 | We have recorded electrolyte electroreflectance (EER) spectra at room temperature in the energy range of 1.4 to 3.5 eV for WSe? single crystals with Re impurity to examine the effect of dopant on the near band-edge excitonic transitions as well as higher lying interband transitions. Both freshly cleaved van der Waals planes (E?c; k∥c) and as-grown edge planes (E?c, E∥c; k?c) EER measurements were made possible by the thicker samples of Re-doped WSe?. The anisotropic excitonic transitions A and B for both k?c and k∥c configurations have been studied in terms of Lorentzian oscillators and a strong dependence on polarization was compared with that of the undoped samples. The basis for assignment of excitonic transition energies is determined accurately and a probable energy-band structure is constructed. |
本系統之摘要資訊系依該期刊論文摘要之資訊為主。