查詢結果分析
相關文獻
- Growth Kinetics of Chemical-Vapor-Deposited Pb(Zr戓,Ti[fec5])O[feb0]Films from a Pb(C[feaf]H忦)[feb2]/Zr(O-t-C[feb2]H状)[feb2]/Ti(O-i-C[feb0]H乣)[feb2]/O[feaf] Reaction System
- 固定相34:芆Poly(1-vinylimidazolium chromate-coupling agent-silica (PVI-Cr-CA-Phase)之製備及其對醇氧化成醛或銅能力的探討
- 早期聲門癌以內視鏡二氧化碳雷射顯微手術治療的長期追蹤結果
- Liquid Mixing and Mass Transfer in a Modified Bubble Column with Suspended Particles
- Effects of Zinc Deficiency on Endogenous Antioxidant Enzymes and Lipid Peroxidation in Glomerular Cells of Normal and Five-Sixths Nephrectomized Rats
- 牛肉粉、豬肉粉與雞肉粉之照射
- 活性氧在植物病害防禦上所扮演的角色
- 銅及鎘離子對亞鐵離子催化過氧氫分解氯酚類污染物之效應
- 過氧化氫在UV光照射下之裂解行為研究:氯離子及硝酸根離子之影響效應
- 替代燃料對汽柴油引擎性能、毒性、污染與噪音特性分析之研究
頁籤選單縮合
題名 | Growth Kinetics of Chemical-Vapor-Deposited Pb(Zr戓,Ti[fec5])O[feb0]Films from a Pb(C[feaf]H忦)[feb2]/Zr(O-t-C[feb2]H状)[feb2]/Ti(O-i-C[feb0]H乣)[feb2]/O[feaf] Reaction System=以四乙基鉛/四異氧丁基鋯/四異氧丙基鈦/氧為反應系統化學氣相沉積鋯鈦酸鉛膜的反應動力之研究 |
---|---|
作者 | 鄭惟元; 洪儒生; | 書刊名 | Journal of the Chinese Institute of Chemical Engineers |
卷期 | 35:6 2004.11[民93.11] |
頁次 | 頁603-611 |
分類號 | 460.02 |
關鍵詞 | 四乙基鉛; 四異氧丁基鋯; 四異氧丙基鈦; 氧; 低壓化學氣相沉積法; 鋯鈦酸鉛膜; 成長反應動力; Pb(C[feaf]H忦)[feb2]; Zr(O-t-C[feb2]H状)[feb2]; Ti(O-i-C[feb0]H乣)[feb2]; MOCVD; PZT; Growth kinetics; Eley-Rideal mechanism; |
語文 | 英文(English) |
中文摘要 | 以四乙基鉛、四異氧丁基鋯、四異氧丙基鈦與氧氣為反應物,在773-853K的溫度範圍,藉由低壓化學氣相沉積法,沉積鋯鈦酸鉛膜於鍍有白金的矽基材上。藉由分析薄膜成長速率對沉積溫度與各個反應物濃度的變化,探究出鋯鈦酸鉛膜的成長反應動力。結果發現成長率對四乙基鉛及氧氣濃度變化呈現Langmuir-Hinshelwood的動力形成,但對四異氧丁基鋯及四異氧丙基鈦則呈現線性關係。據此,提案一Eley-Rideal的反應機制。即以兩個表面吸附物種(四乙基鉛與氧氣)與兩個直接由氣相供給的物種(四異氧丁基鋯與四異氧丙基鈦)進行反應來描述鋯鈦酸鉛薄膜的成長行為,經由對不同沉積溫度的長膜速率變化作數值分析,求得四乙基鉛的吸附熱約為-51.5 kcal/mol,顯示四乙基鉛在此一薄膜成長程序中,具有強表面吸附的特質。 |
英文摘要 | Lead zirconate titanate (PZT) films were deposited on Pt-coated Si substrates by means of the low-pressure chemical vapor deposition (LPCVD) technique using tetraethyl lead (Pb(C2H5)4), zirconium tert-butoxide (Zr(O-t-C4H9)4), titanium tetraisopropoxide (Ti(O-I-C3H7)4), and oxygen (O2) as reactants at temperatures ranging from 773 to 853K. The film growth kinetics was studied by investigating the growth rate dependencies at various substrate temperatures and reactant concentrations of Pb(C2H5)4, Zr(O-t-C4H9)4, Ti(O-i-C3H7)4, and O2, respectively. The film growth rate obeyed Langmuir-Hinshelwood typed kinetics with respect to Pb(C2H5)4 and O2 but increased linearly with the concentrations of the B-site precursors, i.e., Zr(O-t-C4H9)4 and Ti(O-i-C3H7)4. An Eley-Rideal mechanism that considers a surface reaction among two adsorbed species, Pb(C2H5)4 and O2, and two gaseous species, Zr(O-t-C4H9)4 and Ti(O-i-C3H7)4, was established to describe the PZT film growth behavior. Growth rate fitting with respect to the reaction temperature gave an adsorption energy of about-51.5 kcal/mol, indicating strong surface adsorption characteristic of Pb(C2H5)4 during the film growth process. |
本系統之摘要資訊系依該期刊論文摘要之資訊為主。