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題名 | 以矽/氮化矽為材料在砷化鎵基板上鍍製抗反射及高反射鏡=Using Si/SiN[febb]to Deposit Antireflection and High-reflection Mirrors on GaAs Wafer |
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作者 | 謝彩鳳; 施銘洲; 黃承揚; | 書刊名 | 光學工程 |
卷期 | 87 2004.09[民93.09] |
頁次 | 頁49-54 |
分類號 | 448.59 |
關鍵詞 | 砷化鎵; 光學鍍膜; 氮化矽; 直流磁控濺鍍; GaAs; Optical coating; Silicon nitride; DC magnetron sputtering; |
語文 | 中文(Chinese) |
中文摘要 | 本文將要介紹以矽及氮化矽分別為高低折射率材料在砷化鎵基板上鍍製抗反射及高反射鏡的製程方法,在波長1,520~1,580nm的範圍內,反射率可達2%(AR)及91%(HR)。濁中對於膜層在砷化鎵基板上極為困難的附著條件也提出改善的方法及建議。 |
英文摘要 | In this article, we introduce process of depositing Si and SiNx as the interlaced high and low refractive index layers to fabricate the antireflection and high-reflection mirrors on GaAs wafer. The measured reflectance of AR and HR in the wavelength ranges from 1,520nm~1,580nm is 2% and 9%, respectively. The improvement of the poor adhesion on the surface of GaSa substrate is also described. |
本系統之摘要資訊系依該期刊論文摘要之資訊為主。