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頁籤選單縮合
題名 | Modeling of Drain Current Noise of Deep Submicron MOSFETs=深次微米金氧半場效電晶體之汲極電流雜訊模型分析 |
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作者姓名(中文) | 鄧恒發; 張勝良; | 書刊名 | 南開學報 |
卷期 | 2:1 2004.03[民93.03] |
頁次 | 頁19-26 |
分類號 | 448.552 |
關鍵詞 | 次臨限區域; 金氧半場效電晶體; 高頻雜訊; 熱雜訊; High-frequency noise; MOSFETs; Thermal noise; Sub-threshold region; |
語文 | 英文(English) |
中文摘要 | 此論文討論高頻汲極電流雜訊模型,此可適用於深次微米金氧半場效電晶體操作在強反轉,中間反轉與弱反轉區域。此模型涵蓋深次微米元件的物理現象;如非區域性載子熱效應與臨限電壓縮減等。經與實驗數據比較,可以得證此模型之適用性。當元件偏壓在強反轉區域且在高頻操作時,金氧半場效電晶體的高頻汲極電流雜訊,通常以為主要是熱雜訊所致。然而,當元件處於次臨限區域之高頻汲極電流雜訊之現象,卻極少被提出討論。因此,本論文之目的,即是討論雜訊之全區域之狀態以建立其完整的模型。 |
英文摘要 | In this paper, it presents a high-frequency drain current noise model valid in strong inversion, moderate and weak inversion regions for deep submicron MOSFETs. This model considers the deep submicron device physics such as nonlocal carrier heating and threshold voltage reduction, and also verified with e.xperimental data of MOSFETs. At high frequency, the MOSFET drain current noise is generally accepted as dominated by the thermal noise, when the MOSFET is operating in strong inversion region. Works are extended the above theory to describe the high-frequency drain current noise in sub-threshold region. |
本系統之摘要資訊系依該期刊論文摘要之資訊為主。