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相關文獻
- A Powerful and Sensitive Gauge for Plasma-Process-Induced Damage in Differential Amplifier Circuit Design
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題 名 | Detection of Gate-Oxide Integrity in Plasma Etching Process with Differential Amplifier Circuit Design=於電漿蝕刻製程中藉著差動放大器線路以偵測閘極氧化層的品質 |
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作 者 | 王木俊; 蔡政村; 陳厚銘; 廖御傑; | 書刊名 | 暨大學報 |
卷 期 | 7:1 2003.06[民92.06] |
頁 次 | 頁155-168 |
分類號 | 448.57 |
關鍵詞 | 氧化層; 電漿製程; 損傷; 可靠度; 天線; 差動放大器; Oxide; Plasma process; Damage; Reliability; Antenna; Differential amplifier; |
語 文 | 英文(English) |
中文摘要 | 在半導體製程中,閘級氧化層的品質在超大型積體電路或極超大型積體電路愈來愈重要。而電漿製程在蝕刻上亦被大量採用。然而,其對閘級氧化層所造成損傷,卻是一種普遍的現象。如何降低此效應至可接受的範圍,是現今半導體量產中,一個很重要的議題。在這篇論文中,我們提出一個功能強又靈敏的感測量具--差動放大器線路與天線圖形設計。藉著模擬的結果,可以有效地偵測閘級氧化層的品質,由於後段電漿製程時,所造成的劣化現象,使得氧化層的可靠性變差,進而影響IC產品的效益。此珍貴資料,亦可回饋至製程部門,以利電漿製程參數調整,提高量產品質。 |
英文摘要 | Gate-oxide integrity is more and more important in VLSI or ULSI circuits. In submicron or deep-submicron semiconductor process technology, the plasma process has been widely adopted in etching. However, plasma process induced damage (PPID) is also a common phenomenon influencing gate oxide reliability and circuit performance. How to reduce this effect to an acceptable level is a key issue in recent semiconductor fabrication. In this paper, we propose a differential amplifier circuit plus designed antenna test patterns to accurately detect plasma impact on gate-oxide integrity. With the circuit simulation, the degree of the process charging effect from the different back-end metal, or poly contact layers on gate-oxide reliability can be effectively gauged. This importunt information can be returned to process engineers to optimally adjust the plasma process when circuit products require precise and excellent device performance. |
本系統中英文摘要資訊取自各篇刊載內容。