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頁籤選單縮合
題 名 | A Powerful and Sensitive Gauge for Plasma-Process-Induced Damage in Differential Amplifier Circuit Design=差動放大器線路作為電漿製程中一種強有力的感測量具 |
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作 者 | 王木俊; 陳厚銘; 蔡政村; 洪進華; | 書刊名 | 大葉學報 |
卷 期 | 12:1 2003.06[民92.06] |
頁 次 | 頁37-41 |
分類號 | 448.5 |
關鍵詞 | 電漿製程; 損傷; 氧化層; 可靠度; 天線; 差動放大器; Plasma process; Damage; Oxide; Reliability; Antenna; Differential amplifier; |
語 文 | 英文(English) |
中文摘要 | 在半導體製程中,電漿製程對閘級氧化層所造成損傷,是一種普遍的現象。如何降低此效應至可接受的範圍,是現今半導體量產中,一個很重要的議題。在這篇論文中,我們提出一個功能強又靈敏的感測量具 --- 差動放大器線路與天線圖形設計。藉著模擬的結果,可以有效地偵測閘級氧化層的品質,由於後段電漿製程時,所造成的劣化現象,使得氧化層的可靠性變差,進而影響IC產品的效益。此珍貴資料,亦可回饋至製程部門,以利電漿製程參數調整,提高量產品質。 |
英文摘要 | Plasma-process-induced damage (PPID) in the semiconductor process is a common phenomenon influencing gate-oxide reliability and circuit performance. How to reduce this effect to an acceptable level is a key issue in recent semiconductor manufacturing. In this paper, a differential amplifier circuit plus designed antenna test patterns to powerfully detect this plasma impact on gate-oxide integrity is proposed. In circuit simulation, the degree of the charging effect in the process from a different back-end metal or via layers on gate-oxide reliability can be effectively gauged. This valuable information can be returned to the process engineers to optimally adjust the plasma process if certain circuit products request a precise and excellent device performance. |
本系統中英文摘要資訊取自各篇刊載內容。