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題名 | The Behavior of Dark Current Introduced Extra Excess Noise of Superlattice Avalanche Photodiodes=暗電流於超晶格累崩光二極體所造成額外過雜訊的影響 |
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作者姓名(中文) | 施能夫; | 書刊名 | 樹德學報 |
卷期 | 25 2000.03[民89.03] |
頁次 | 頁139-153 |
分類號 | 448.5 |
關鍵詞 | 過雜訊; 累崩光二極體; 超晶格; Excess noise; Superlattice; Avalanche photodiode; |
語文 | 英文(English) |
中文摘要 | 將光波轉換為電訊號的累崩光二極體於光纖通訊系統中佔一非常重要的角色,但 是以往對於暗電流所造成的效應一直並不清楚。和載子從二極體的一端注入作比較,暗電流 由於只做部份倍增的過程,造成平均增益值下降。以往對於任意重復注入載子的平均倍增及 過雜訊因數的分析,已推展至可容許能隙、暗載子產生率及游離係數對距離的變化。和以往 別人所分析載子從一端注入相比較,其結果顯示在空乏區所產生的暗載子導致較小的倍增增 益和較高的過雜訊因數。 |
英文摘要 | Avalanche photodiodes, which converse light-wave signal into electric signal, introduce an important role in fiber communication system. However, the effect of dark generation current is not very clearly. The dark current results in a smaller mean multiplication gain due to the partial multiplication process of these generated carriers than the usual values associated with carriers injected at one edge of the diode. Previous analysis of mean multiplication and excess noise factor for an arbitrary superposition injected carriers are extended to allow the presence of dark carriers in the multiplication region under the model, which admits variation (with position) of the bandgap, dark generated rate, and ionization coefficients with each stage for the superlattice APD. The results reveal the presence of the dark carriers in the depletion results in a smaller mean multiplication gain and a larger excess noise factor than the usual values associated with carriers injected at one edge of the device. |
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