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題名 | Preparation and Analysis of Silicon Negative Differential Resistance Diodes with Porous Superlattice Structure=多孔矽超晶格負微分電阻二極體之研製 |
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作者 | 王水進; 蔡豪益; 林鴻仁; | 書刊名 | Proceedings of the National Science Council : Part A, Physical Science and Engineering |
卷期 | 22:2 1998.03[民87.03] |
頁次 | 頁235-242 |
分類號 | 448.57 |
關鍵詞 | 多孔矽超晶格結構; 負微分電阻特性; Porous silicon; Superlattice; Negative differential resistance; Anodization; Peak-to-valley current ratio; Resonant tunneling; |
語文 | 英文(English) |
中文摘要 | 本文旨在報導有關多孔矽超晶格結構之製備及其室溫下之I-V特性。於實驗方面 ,計採用A與B兩種方法,前者於陽極氧化過程中,週期性進行紫外光照射;後者則週期性 改變其氧化蝕刻電流大小。利用這兩種方法所製得之多孔矽超晶格結構皆具有極顯著之負 微分電阻特性,室溫下其峰-谷電流比值介於2.6與5.1之間。此種負微分電阻特性,可能 係因載子於某些相鄰多孔矽層之量子能階上行共振穿透傳導所造成。文中將討論有關方法 A中每週期光照時間長短及方法B中每週期低蝕刻電流時間長短對負微分電阻特性之影響。 |
英文摘要 | In this paper, the preparation and electrical properties of silicon porous superlattice (SPS) negative differential resistance (NDR) diodes are presented. Two different methods (namely, method A and method B) were employed for the fabrication of SPSS. In method A, the anodization was performed under periodical ultraviolet (UV) illumination while in method B, the anodization was carried out under periodical modulation of the etching current density. For both types of SPS diodes, strong NDR with a peak-to- valley current ratio in the range of 2.6-5.1 was observed at room temperature. It was presumed that a resonant tunneling mechanism analogous to that which occurs in conventional resonant tunneling diodes with a double barrier or a superlattice structure might have been responsible for the observation results. The influence of the UV illumination interval in method A and the low current interval in method B on the NDR characteristics of the SPS diodes are discussed. In addition, the photo sensitive NDR characteristics of SPS diodes using method B are also reported. |
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