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題 名 | Pore Structure Modification of Porous Support by PPCVD: A Technique to Reduce Permeability Loss=以PPCVD法對多孔基材的孔洞修飾:減少透過率下降之技術 |
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作 者 | 洪儒生; 賴韓棕; | 書刊名 | Journal of the Chinese Institute of Chemical Engineers |
卷 期 | 30:3 1999.06[民88.06] |
頁 次 | 頁189-197 |
分類號 | 349.393 |
關鍵詞 | 多孔基材; 孔洞; 透過率; 微粒子輔助化學氣相沉積法; PPCVD; Particle precipitation aided chemical vapor deposition; Inorganic membrane; Pore modification; Permeability; Porosity; |
語 文 | 英文(English) |
中文摘要 | A technique termed as the particle precipitation aided chemical vapor deposition (PPCVD) was utilized to modify the pore structure of an inorganic porous support. In contrast to the traditional CVD modification processes which form dense films on the pore wall, PPCVD modifies the pore structure by piling up fine particles in/on the porous support to reduce the pore size but maintaining a large permeability. The reaction system used was Si□/□□/N□ which generated SiC/□□ composite particles in the gas phase to be deposited on the support at 1323 K. Single gas permeation measurement of the support before and after modification showed that a decrease of the average pore radius from 2.61 to 1.57μm was a accompanied by only 20% of permeability loss, i.e., 43% reduction of the permeability loss was achieved as compared to that obtained from the traditional CVD processes. Analysis of the pore structure based on the gas permeation data showed that the porosity of the modification layer is 1.1 times larger than that of the original support. |
英文摘要 | 本文提案以微粒子輔助化學氣相沉積法(PPCVD)來修飾無機多孔基材的孔洞結構。相對於傳統CVD法在孔洞內壁形成緻密膜,PPVCD法乃以氣相合成的微粒子沈基在孔洞內部或表面上形成多孔層,使基材孔徑減小時還能保持較大的透過率。本實驗的反應系統為矽甲烷/乙烷/氨在1323K下生成碳化矽氮化矽複合微粒子後,令其沈降在多孔基材上。由氣體透過測式發現基材的平均孔洞半徑由2.61微米減至1.57微米時僅隨伴20%的透過率下降,比傳統CVD減少了43%的透過率下降。此乃因修飾層具有比孔洞基材約大一倍的孔隙度所致。 |
本系統中英文摘要資訊取自各篇刊載內容。