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題 名 | 非晶形硒影印感光體研製及其光電特性之探討=Study on the Fabrication and Optoelectronic Properties of Amorphous Selenium Photoreceptors |
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作 者 | 周榮泉; 李沿慶; 楊淑英; | 書刊名 | 技術學刊 |
卷 期 | 14:2 1999.06[民88.06] |
頁 次 | 頁213-219 |
分類號 | 440.33 |
關鍵詞 | 光激放電曲線; 最初表面電位; 暗衰減時間; 光敏度; 殘餘電位; 恆溫退火; Initial surface potential; Photosensitivity; Residual potential; Isothermal annealing; |
語 文 | 中文(Chinese) |
中文摘要 | 非晶形硒基材料可應用於影印機之感光體,為了對此類感光體有更深入的認識, 使用熱氧化法及真空濺射法分別在拋光後的鋁基板上備製氧化鋁 (AI �� O �� ) 及三氧化 鎢 (WO �� ) 以作為阻隔層之用,再利用真空蒸鍍法備製非晶形硒基薄膜,完成下列二種感 光體:Al/Al �� OV �� /a-Se,Al/WO �� /a-Se,並使其達到商業化之要求,其中 Al/WO �� /a-Se 感光體其最初表面電位為 977V、 電壓對照比為 l7。 且利用靜電帶電分析儀 (Electrostatic Paper Analyzer) 對樣品進行光電特性之量測與比較, 得到光激放電曲線 (PIDC,Photo-Induced Discharge Curve) 及最初表面電位 (initial surface potential) 、 暗衰減時間 (dark decay time)、 光敏度 (photosensitivity)、 殘餘電位 (residual potential) 四項參數, 並討論之。 另外, 吾人並對阻隔層對感光體之影響及恆溫退火 (isothermal annealing) 對感光體之效應作更進一步之研究與瞭解。 |
英文摘要 | Amorphous selenium-based material can be used as the photoreceptor of a photocopy machine. To further understand the amorphous selenium (a-Se) photoreceptor, thermal oxidation and vacuum sputtering methods were used to deposit aluminum oxide (AI �� O �� ) and tungsten oxide (WO �� ) on the polished aluminum substrates as blocking layers. Then, we used the method of vacuum evaporation to prepare the amorphous selenium film in order to complete the Al/Al �� O �� /a-Se and Al/WO �� /a-Se photoreceptors. The optoelect ronic proper- ties of the samples were measured and compared. It was found that Al/WO �� /a- Se photoreceptors had excellent optoelectronic properties when the initial surface potential was 977V and the voltage contrast ratio was 17. A photo- induced discharge curve (PIDC) could be generated using an Electrostatic Paper Analyzer, and then the initial surface potential, dark decay time, photosensitivity and residual potential of a sample could be obtained. Furthermore, we also compared the effects of different blocking layers and isothermal annealing on the photoreceptors. |
本系統中英文摘要資訊取自各篇刊載內容。