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題 名 | 非晶形a-C:H/a-Se(or alloy)/Al[feaf]O[feb0]/Al結構之研製及其光電特性之探討 |
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作 者 | 周榮泉; 莊典明; | 書刊名 | 材料科學 |
卷 期 | 26:4 1994.12[民83.12] |
頁 次 | 頁311-314 |
分類號 | 440.34 |
關鍵詞 | 感光體; 表面電位; 暗衰減時間; 光敏度; 殘餘電位; Photoreceptor; Surface potential; Dark decay time; Photosensitivity; Residual potential; |
語 文 | 中文(Chinese) |
中文摘要 | 本論文係研製一種新型影印感光體結構,它結合了非晶形碳:氫(a-C:H) 材料之穩定性,高硬度及透光性佳與非晶形硒(a-Se)系列材料高感度的雙重特 色。首先我們利用真空蒸鍍法於50℃的鋁基板上沈積非晶形硒基材料感光體結構 a-As�特e��/a-Se/a-As�特e��/Al�烙��/Al,發現此結構具有較佳的光敏度1.6Lux. sec及較低的殘餘電位8V,但其表面電位太低140V(26V/μm),並且暗衰減時間太 短5.8sec,因此我們利用化學氣相沈積法成長a-C:H薄膜,再研製出a-C:H/SnO�� /a-As�特e��/a-Se/a-As�特e��/Al�烙��/Al感光體結構,發現此結構之表面電位提高 為237v(44v/μm),暗衰減時間增長為12.5sec,並且仍具有1.8Lux.sec較佳之光敏 度,此結構為一光電特性十分優良之感光體,因此可廣泛地應用於影印機上。 |
英文摘要 | In this paper, the new type of photoreceptors for the electrophotographic application will bestudied. It contains not only the properties of the high hardness, stability, and transparency in hydrogenated amorphous carbon (a-C:H) but also the high sensitive character of amorphous selenium (a-Se).The multilayer amorphous selenium-based evaporation method. The first, we fabricated the structurea-As�特e�� /a-Se/a-As�特e��/Al�烙��/Al by the concept of separate functions and found that it has highphotosensitivity (1.6 Lux. sec) and low residual potential (8 V). Furthermore, we fabricated the secondstructure, a-C:H /SnO��/a-As�特e��/a-Se/a-As�特e��/Al�� O��/Al and found that the surface potential (237 V,44 V/μm) and dark decay time (12.5 sec) are better than those of the first structure and it remained the merits of high photosensitivity (1.8 Lux.sec). It has the best optoelectronic properties and can be widely used for xerographic machine. |
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