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題 名 | Al/a-Si:H/a-As[feaf]Se[feb0]影印感光體研製及其光電特性之探討=Study on the Fabrication and Optoelectronic Properties of Al/a-Si:H/a-As[feaf]Se[feb0]Electrophotographic Photoreceptor Structures |
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作 者 | 周榮泉; 江廣原; 楊淑英; | 書刊名 | 材料科學 |
卷 期 | 31:1 1999.03[民88.03] |
頁 次 | 頁35-42 |
分類號 | 440.33 |
關鍵詞 | 光激放電曲線; 最初表面充電電位; 光敏度; 殘餘電位; 恆溫退火; Photoinduced discharge curve; Initial surface charging potential; Photosensitivity; Residual potential; Isothermal annealing; |
語 文 | 中文(Chinese) |
中文摘要 | 非晶形硒基感光體由於對可見光有較佳的光敏度( photosensitivity ),被廣 泛的使用於目前的影印機之感光圓鼓上,對非晶形矽氫( a-Si:H )而言亦具備此特性,因 此我們嘗試結合非晶形矽氫與非晶形硒化砷( a-As �� Se �陛^研製出 Al/a-Si:H/a-As �� Se �健P光體結構, 利用靜電帶電分析儀 EPA-8100 ( Electrostatic Paper Analyzer ) 量測感光體之光激放電曲線 PIDC ( photoinduced discharge curve ),發現此感光體結 構除具有高的最初表面充電電位( initial surface charging potential )外,亦具有低 的光敏度值、低的殘餘電位( residual potential )。為了對感光體特性有更進一步了解 ,我們將探討材料的熱穩定性、對不同入射波長的光敏度及載子在感光體內的移動情形,並 量測其在恆溫退火( isothermal annealing )時對感光體特性之影響。 |
英文摘要 | Due to their high photosensitivity in visible light, amorphous seleniun-based materials and hydrogenated amorphous silicon (a-Si:H) have been widely used on the drum of photoreceptor in photocopy machines. We therefore tried to combine the a-Si:H and amorphous arsenic selenide (a-As�特e��) and prepared the structure of Al/a-Si:H/a-As�特e�郡hotoreceptor. By using the Electrostatic Paper Analyzer (Model EPA-8100) to measure the PIDC (photoinduced discharge curve), we discovered that the structure discussed above is high for the initial surface charging potential but low for the photosensitivity and residual potential. For the further understanding of photoreceptor we are going to study the thermal stability, the photosensitivity of the different incident wavelength, the movement of carriers in the photoreceptor and the characteristics of photoreceptor during the isothermal annealing. |
本系統中英文摘要資訊取自各篇刊載內容。