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題 名 | Direct Determination of Fermi Level Pinning by the Amplitude of Photoreflectance Spectra=以光調制反射光譜之振幅直接測定費米能階之穿定值 |
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作 者 | 陳堯輝; | 書刊名 | 臺北科技大學學報 |
卷 期 | 32:2 1999.09[民88.09] |
頁 次 | 頁1-9 |
分類號 | 343.16 |
關鍵詞 | 光調制反射光譜術; 費米能階穿定值; Photoreflectance; Fermi level pinning; |
語 文 | 英文(English) |
中文摘要 | 室溫時,以光調制及射光譜量測砍化鎵之表面費米能階之穿定值,實驗證明光調制 及射光譜之號大小與由調變之光源所激發之光予數量成正比。分析光調制反射光譜之訊號大 小與調變光源之強度關係,在(100)方向以分子束磊晶成長之砍鎵之表面費米能階之穿冤值 為低於導電帶0.72±0.02電子伏特。 |
英文摘要 | We have studied the surface Fermi level position of GaAs at room temperature by photoreflectance(PR). Experiments demonstrated that the PR amplitude is proportional to the photon flux generated by a modulation light. From the analysis of the dependence of amplitude of amplitude of PR on modulation-light power density, the surface Fermi level of 0.72±0.02eV below conduction band was determined for a molecular beam epitaxially-grown GaAs (100). |
本系統中英文摘要資訊取自各篇刊載內容。