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題名 | Low-Voltage and High-Rain PIn Photosensors with Bragg Reflectors on Amorphous Silicon-Germanium Alloy=利用布拉格反射器增強的低電壓及高增益非晶矽鍺合金紅外線感測器之研製 |
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作者姓名(中文) | 何志傑; | 書刊名 | 和春學報 |
卷期 | 4 1997.07[民86.07] |
頁次 | 頁57-66 |
分類號 | 471.3 |
關鍵詞 | 布拉格反射器; 低電壓; 高增益; 非晶矽鍺合金紅外線感測器; IR photosenor; Bragg reflector; Optical gain and responsivity; PECVD; |
語文 | 英文(English) |
中文摘要 | 本文乃利用布拉格反射器研製高光增益及靈敏度之非晶矽鍺合金紅外線感測器。 所謂布拉格反射器,即以電漿助長化學氣相沉積法,逐層將α -Si:H 與α -SiGe:H 成長於 矽鍺合金的 p-i-n 結構上層。由其實驗結果顯示,此一新設計結構相較於傳統之 p-i-n 累 增光感測器,具相當不錯之元件特性表現; 尤其在一微瓦的入射光功率下, 其光增益可由 80 提昇至 328,其半頻寬值 (FWHM) 亦由 250nm 降低至 150nm。 |
英文摘要 | An amorphous silicon-germanium alloy (α-SiGe:H) infrared (IR) photosensor with a Bragg reflector by plasma enhanced chemical vapor deposition(PECVD) to obtain high optical gain and responsivity is demonstrated. The Bragg reflector containing α -Si:H and α -SiGe:H layers was grown on the top of p-i-n(PIN) structure with an amorphous silicon/germanium alloy. All of the amorphous silicon and amorphous silicon germanium layers were deposited by a low-temperature PECVD system. The experimental results of the new structures exhibit a much superior performance to that of conventional PIN avalanche photosensor structures. That is, the structure with a Bragg reflector shows a significant improvement in optical gain from 80 to 328 under the incident optical power of 1 uW, and the full width at half maximum (FWHM)can be reduced from 250 nm to 150 nm. |
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