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題 名 | 真空蒸鍍聚亞醯胺薄膜介電性質=Dielectric Properties of Vapor Deposition Polymerized Polyimide Films |
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作 者 | 程謙禮; 周卓煇; | 書刊名 | 材料科學 |
卷 期 | 29:4 1997.12[民86.12] |
頁 次 | 頁261-267 |
分類號 | 440.34 |
關鍵詞 | 真空蒸鍍聚合; 聚亞醯胺薄膜; 介電性質; 導電層; 絕緣層; 導電層; Vapor deposition polymerization; Polyimide thin film; Dielectric property; Conductor; Insulator; Conductor; CIC; |
語 文 | 中文(Chinese) |
中文摘要 | 本研究探討真空蒸鍍聚合(Vapor Deposition Polymerization)聚亞醯胺 (Polyimide) 薄膜的介電性質 (Dielectric Property) 。 研究中測試試片的結構為 conductor/insulator/conductor (CIC) 結構,即 Al 電極╱蒸鍍聚合亞醯胺薄膜╱ITO 電 極。 在介電常數 (Dielectric Constant) 及逸散因數 (Dissipation Factor) 的測試結果 上, 發現蒸鍍聚合聚亞醯胺薄膜在測試頻率 1kHz 時, 其介電常數為 3.7, 逸散因數為 0.021, 但試片經 160 ℃ 3 小時真空熱處理後, 介電常數及逸散因數則分別降為 3.5 及 0.012。 在介電強度 (Dielectric Strength) 的測試結果上, 發現此薄膜的介電強度為 2.5MV/cm,但薄膜厚度降低到 1000 以下時, 介電強度值則約為 0.75 MV/cm,此可能是薄 膜內的缺陷,特別是針孔 (Pinhole) 的存在,會使得介電強度大幅降低。 |
英文摘要 | In this study, the dielectric properties of vapor deposition polymerization (VDP) polyimides (PI) thin films have been characterized by empolying a trilayer testing conductor/ insulator/conductor (CIC) structure, which composes an aluminum electrode, the VDP PI thin film, and an ITO glass. The dielectric constant and dissipation factor of the VDP PI film are 3.7 and 0.012 at 1k Hz testing frequency prior to annealing. After annealing the specimens at 160 ℃ for 3 hr in vacuum oven, the dielectric constant and dissipation factor have changed to 3.5 and 0.012 at the same testing frequency. In the dielectric strength study, the dielectric strength of the VDP PI film is 2.5MV/cm. For thickness of 1000 or less, the dielectric strength drops to 0.75MV/cm. This may mainly be attributed to the presence of defects, especially pinholes, in the thin film. |
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