查詢結果分析
相關文獻
- Effects of N-Type Shallow Implantation Depletion Layer Width on the Breakdown Voltage of a Schottky Barrier Diode Fabricated on P-Type Substrate
- An Analysis of Optimistic Model Parameter Concerned about N-Type Shallow Implantation Depletion Layer Width on the Breakdown Voltage of a Schottky Barrier Diode Fabri-Cated on P-Type Substrate
- Effects of N-Type Shallow Implantation on the Breakdown Voltage of a Schottky Barrier Diode Fabricated on P-Type Substrate
- 低能量離子佈植技術及兩段式熱處理之探討
- 表面回應方法在絕緣閘雙極性功率電晶體元件靜態特性之最佳化設計
- 離子佈植機
- 低能量離子佈植技術及F狇預先非晶化佈植之探討
- High-Breakdown Characteristics of the InAlAsSb/InGaAs/InP Heterostructure Field-Effect Transistor
- 快速升溫退火砷離子佈植砷化鎵近能隙能帶吸收光譜之研究
- 高劑量離子佈植及回火後之焦化光阻的去除方法
頁籤選單縮合
題 名 | Effects of N-Type Shallow Implantation Depletion Layer Width on the Breakdown Voltage of a Schottky Barrier Diode Fabricated on P-Type Substrate=N型淺離子佈植空乏層寬度對製造在P型基片蕭基能障二極體崩潰電壓之影響 |
---|---|
作 者 | 黃亞麒; 李連城; | 書刊名 | 黃埔學報 |
卷 期 | 38 1999.12[民88.12] |
頁 次 | 頁317-334 |
分類號 | 337.9 |
關鍵詞 | 離子佈植; 蕭基能障二極體; 崩潰電壓; |
語 文 | 英文(English) |
中文摘要 | 本文係分析及計算低能量離子佈植其空乏層寬度對金屬N-P型蕭基能障二極體之崩潰電壓之影響,文中引用了兩種游離係數(IONIZATION CO EFFICIENT)式;其一為用平均游離係數,由空乏層游離式,得到崩潰電 壓及空乏層寬度,其次利用電子與電洞不具相同游離係數的通化游離積分式,根據數值分析結果,兩種模式(MODEL)的結果非常接近。本文並預測出一個重要結果:即空乏層寬度之加大可提高蕭基能障二極體之崩潰電壓,可予製造業者作一產製方面之參考。 |
英文摘要 | An analytic expression for the effects of low energy ionimplantation on the breakdown voltage of a Mnp-Schottky barrier diode has been analyzed and computed in this paper. Two expressions for ionization coefficient are used. The first one is the average ionization coefficient. Based on this average ionization coefficient, the ionization integral in the depletion layer is computed, which yields the values of avalanche breakdown and channel width of depletion layer at breakdown. The second one is based on more general expression with different ionization coefficients for electrons and holes. From the computed data, it is found that both models are approached closely. Moreover, it has been shown that the breakdown voltage of a Schottky barrier diode can be increased by enlarging the channel width of depletion laver. This paper may be a good reference to some manufacturing process. |
本系統中英文摘要資訊取自各篇刊載內容。