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- An Analysis of Optimistic Model Parameter Concerned about N-Type Shallow Implantation Depletion Layer Width on the Breakdown Voltage of a Schottky Barrier Diode Fabri-Cated on P-Type Substrate
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題 名 | An Analysis of Optimistic Model Parameter Concerned about N-Type Shallow Implantation Depletion Layer Width on the Breakdown Voltage of a Schottky Barrier Diode Fabri-Cated on P-Type Substrate=N型淺離子佈植空乏層寬度對製造在P型基片之蕭基能障二極體崩潰電壓最佳模式參數之分析 |
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作 者 | 黃亞麒; | 書刊名 | 黃埔學報 |
卷 期 | 43 2002.09[民91.09] |
頁 次 | 頁321-340 |
分類號 | 337.9 |
關鍵詞 | 離子佈植; 空乏層寬度; P型基片; 蕭基能障二極體; 崩潰電壓; 游離係數; Ionization coefficient; |
語 文 | 英文(English) |
中文摘要 | 本文係分析及計算低能量離子佈植其空乏層寬度對金屬-N-P型蕭基能障二極體之崩潰電壓之影響,文中引用了兩種游離係數(inonization coefficient) 式;其一為用平均游離係數,由空乏層游離式得到崩潰電壓及空乏層寬度,其次利用電子與電洞不其相同游離係數的通化游離積分式,根據數值分析結果,兩種模數(mode1)的結果非常接近。本文並由計算過程中,發現其最佳模式參數對空乏層寬度之影響甚大,進而可求出最佳模式下之空乏層寬度與蕭基能障二極體之崩潰電壓,非常值得提供製造業者作一產製方面之參考. |
英文摘要 | An analytic expression for the effects of low energy ion-implantation and its depletion layer width on the breakdown voltage of a Mnp-Schottky barrier diode has been analyzed and computed in this paper. Two expressions for ionization coefficient are used. The first one is the average ionization coefficient. Based on this average ionization coefficient, the ionization integral in the depletion layer width is computed, which yields the values of avalanche breakdown and channel width of depletion layer at breakdown. The second one is based on more general expression with different ionization coefficients for electrons and holes. From the computed data, it is found that both models are approached closely. According to the process of accounting, we found the optimistic model parameter concerned about the N-type shallow implantation depletion layer width on the breakdown voltage of a Schottky barrier diode fabricated on P-type substrate. This optimistic model parameter plays an important role to find the relationship between the changes of breakdown voltage to depletion layer width. This paper may be a good reference to some manufacturing fields. |
本系統中英文摘要資訊取自各篇刊載內容。