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題 名 | 表面回應方法在絕緣閘雙極性功率電晶體元件靜態特性之最佳化設計=Optimum Design of Power IGBT Devices Static Characteristics Using Response Surface Methods |
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作 者 | 王啟林; 黃思倫; 賴源育; 于殿聖; 林祺淯; | 書刊名 | 逢甲學報 |
卷 期 | 36 1999.12[民88.12] |
頁 次 | 頁99-123 |
分類號 | 448.551 |
關鍵詞 | 絕緣閘雙極性功率電晶體; 導通電阻; 崩潰電壓; 最佳化; 表面回應方法; 實驗設計; IGBT; On resistance; Breakdown voltage; Optimization; RSM; DOE; |
語 文 | 中文(Chinese) |
中文摘要 | 近年來隨著高功率元件需求的日益增加,而原本被用作高功率元件的雙載子功率 元件已逐漸被其它元件所替代,其中絕緣閘雙極性功率電晶體(Insulated Gate Bipolar Transistor, IGBT)便是被廣泛運用的其中之一。原因在於IGBT具有金氧半電晶體結構的優 點(高速性及高輸入阻抗特性),及雙載子接面電晶體的優點(低飽和電壓特性),所以很適合 於電力電子的開關元件應用。因此,本研究提出應用表面回應方法(Response Surface Method, RSM)於IGBT模型之建立,本法是利用製程模擬軟體(SSUPREM4)與元件模擬軟體(ATLASII)模 擬IGBT元件的靜態特性,即可萃取IGBT靜態特性參數,同時採用實驗設計(Design of Experiment, DOE)方法最佳化IGBT模型。本文的參數萃取主要集中在輸出特性曲線的導通電 阻(R□)與崩潰電壓(V□)。文中提出使用表面回應法及最佳化方法分析IGBT元件特性的模擬 環境,選擇IGBT元件的設計空間去決定設計參數之值,以達到最佳化之R□與V□。 |
英文摘要 | Power semiconductor Insulated Gate Bipolar Transistor (IGBT) devices which is rapidly being incorporated into the power electronic applications have undergone a remarkable development in recent years. The purpose of this work is to develop the IGBT response surface method (RSM) model and to design the optimum IGBT device. The RSM model is based upon the fabrication simulator SSUPREM IV, the device simulator ATLAS II , which simulate the static characteristics, and the parameter extraction methodology, which extract the parameters of R□ and V□. The design of experiment (DOE) with the RSM is used to optimize the IGBT performance and to investigate the relationships with the device parameters. With the aid of DOE, the characteristic of IGBT device will be simulated and studied in detail. |
本系統中英文摘要資訊取自各篇刊載內容。