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頁籤選單縮合
題 名 | Incorporation of Fluorine Atoms into Rapid Thermal Thin Gate Oxides by Liquid Phase Deposition=以液相沉積法將氟原子含入快速熱薄閘極氧化層 |
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作 者 | 胡振國; 盧維新; | 書刊名 | Proceedings of the National Science Council : Part A, Physical Science and Engineering |
卷 期 | 20:3 1996.05[民85.05] |
頁 次 | 頁343-349 |
分類號 | 341.37 |
關鍵詞 | 液相沉積法; 氟原子; 氧化層; MOS device; Thin gate oxide; Liquid phase deposition; Rapid thermal process; |
語 文 | 英文(English) |